TSM033NB04CR Taiwan Semiconductor N-Channel Power MOSFET 40V, 121A, 3.3m FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Low gate charge for fast power switching V 40 V DS 100% UIS and R tested. g R (max) V = 10V 3.3 m DS(on) GS 175C Operating Junction Temperature Q 77 nC Compliant to RoHS directive 2011/65/EU and in g accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS BLDC Motor Control Battery Power Management DC-DC converter Secondary Synchronous Rectification PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 40 V DS Gate-Source Voltage V 20 V GS T = 25C 121 C (Note 1) Continuous Drain Current I A D T = 25C 21 A Pulsed Drain Current I 484 A DM (Note 2) Single Pulse Avalanche Current I 36 A AS (Note 2) Single Pulse Avalanche Energy E 194 mJ AS T = 25C 107 C Total Power Dissipation P W D T = 125C 36 C T = 25C 3.1 A Total Power Dissipation P W D T = 125C 1 A Operating Junction and Storage Temperature Range T , T - 55 to +175 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 1.4 C/W JC Junction to Ambient Thermal Resistance R 48 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA 2 determined by the users board design. The R limit presented here is based on mounting on a 1 in pad of 2 oz copper. JA 1 Version: B1804 TSM033NB04CR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 40 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 2 2.9 4 GS DS D GS(TH) V Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 nA GS DS GSS V = 0V, V = 40V GS DS -- -- 1 Drain-Source Leakage Current I A V = 0V, V = 40V DSS GS DS -- -- 100 T = 125C J Drain-Source On-State Resistance V = 10V, I = 21A R -- 2.4 3.3 m GS D DS(on) (Note 3) (Note 3) V = 10V, I = 21A Forward Transconductance DS D g -- 64 -- S fs (Note 4) Dynamic Total Gate Charge Q -- 77 - g V = 10V, V = 20V, GS DS Gate-Source Charge Q -- 23 -- nC gs I = 21A D Gate-Drain Charge Q -- 19 -- gd Input Capacitance C -- 5022 -- iss V = 0V, V = 20V GS DS Output Capacitance C -- 484 -- oss pF f = 1.0MHz Reverse Transfer Capacitance C -- 250 -- rss Gate Resistance f = 1.0MHz R 0.5 1.5 3 g (Note 4) Switching Turn-On Delay Time t -- 7 -- d(on) Turn-On Rise Time t -- 22 -- r V = 10V, V = 20V, GS DS ns Turn-Off Delay Time I = 21A, R = 2 t -- 35 -- D G d(off) Turn-Off Fall Time t -- 17 -- f Source-Drain Diode (Note 3) Forward Voltage V -- -- 1 V V = 0V, I = 21A SD GS S Reverse Recovery Time t -- 26 -- ns rr I = 21A , S Reverse Recovery Charge Q -- 19 -- nC dI/dt = 100A/s rr Notes: 1. Silicon limited current only. 2. L = 0.3mH, V = 10V, V = 25V, R = 25, I = 36A, Starting T = 25C GS DD G AS J 3. Pulse test: Pulse Width 300s, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM033NB04CR RLG PDFN56 2,500pcs / 13 Reel 2 Version: B1804