X-On Electronics has gained recognition as a prominent supplier of TSM250NB06DCR RLG MOSFETs across the USA, India, Europe, Australia, and various other global locations. TSM250NB06DCR RLG MOSFETs are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TSM250NB06DCR RLG Taiwan Semiconductor

TSM250NB06DCR RLG electronic component of Taiwan Semiconductor
TSM250NB06DCR RLG Taiwan Semiconductor
TSM250NB06DCR RLG MOSFETs
TSM250NB06DCR RLG  Semiconductors

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See Product Specifications
Part No. TSM250NB06DCR RLG
Manufacturer: Taiwan Semiconductor
Category: MOSFETs
Description: MOSFET Dual N-Chan Pwr MOSFET 60V 30A 25mu
Datasheet: TSM250NB06DCR RLG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.425 ea
Line Total: USD 1.42 
Availability - 4850
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4850
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 1.425
10 : USD 1.0956
100 : USD 0.7084
500 : USD 0.5863
1000 : USD 0.5478
2500 : USD 0.5115
5000 : USD 0.4906

   
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We are delighted to provide the TSM250NB06DCR RLG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSM250NB06DCR RLG and other electronic components in the MOSFETs category and beyond.

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TSM250NB06DCR Taiwan Semiconductor Dual N-Channel Power MOSFET 60V, 30A, 25m FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Low gate charge for fast power switching V 60 V DS 100% UIS and R tested g V = 10V 25 GS RoHS Compliant R (max) m DS(on) Halogen-free according to IEC 61249-2-21 V = 7V 31.6 GS Q 22 nC g APPLICATIONS BLDC Motor Control Battery Power Management DC-DC Converter Secondary Synchronous Rectification PDFN56 Dual Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS T = 25C 30 C (Note 1) Continuous Drain Current I A D T = 25C 7 A Pulsed Drain Current I 120 A DM (Note 2) Single Pulse Avalanche Current I 15 A AS (Note 2) Single Pulse Avalanche Energy E 34 mJ AS T = 25C 48 C Total Power Dissipation P W D T = 125C 9.6 C T = 25C 2 A Total Power Dissipation P W D T = 125C 0.4 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL MAXIMUM UNIT Junction to Case Thermal Resistance R 2.6 C/W JC Junction to Ambient Thermal Resistance R 61 C/W JA Thermal Performance Note: RJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JC CA 2 determined by the users board design. The R limit presented here is based on mounting on a 1 in pad of 2 oz copper. JA 1 Version: A1908 TSM250NB06DCR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 60 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 2 3 4 GS DS D GS(TH) V Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 nA GS DS GSS V = 0V, V = 60V GS DS -- -- 1 Drain-Source Leakage Current I A V = 0V, V = 60V DSS GS DS -- -- 100 T = 125C J V = 10V, I = 7A -- 21 25 Drain-Source On-State Resistance GS D R m DS(on) (Note 3) V = 7V, I = 6A -- 24 31.6 GS D (Note 3) V = 10V, I = 7A Forward Transconductance g -- 36 -- S DS D fs (Note 4) Dynamic V = 10V, V = 30V, GS DS Total Gate Charge Q -- 22 -- g I = 7A D Total Gate Charge Q -- 16 -- g nC V = 7V, V = 30V, GS DS Gate-Source Charge Q -- 7 -- gs I = 6A D Gate-Drain Charge Q -- 5 -- gd Input Capacitance C -- 1461 -- iss V = 0V, V = 30V GS DS Output Capacitance C -- 89 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 20 -- rss Gate Resistance f = 1.0MHz R 0.7 2.2 4.4 g (Note 4) Switching Turn-On Delay Time t -- 7 -- d(on) Turn-On Rise Time t -- 9 -- r V = 10V, V = 30V, GS DS ns Turn-Off Delay Time I = 7A, R = 2 t -- 14 -- D G d(off) Turn-Off Fall Time t -- 3 -- f Source-Drain Diode (Note 3) Forward Voltage V -- -- 1.2 V V = 0V, I = 7A SD GS S Reverse Recovery Time t -- 14 -- ns rr I = 7A, S Reverse Recovery Charge Q -- 7 -- nC dI/dt = 100A/s rr Notes: 1. Silicon limited current only. 2. L = 0.3mH, V = 10V, V = 25V, R = 25, I = 15A, Starting T = 25C GS DD G AS J 3. Pulse test: Pulse Width 300s, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION ORDERING CODE PACKAGE PACKING TSM250NB06DCR RLG PDFN56 Dual 2,500pcs / 13 Reel 2 Version: A1908

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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