TSM4800N15CX6 Taiwan Semiconductor N-Channel Power MOSFET 150V, 1.4A, 480m FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Low gate charge for fast power switching V 150 V DS Compliant to RoHS directive 2011/65/EU and in V = 10V 480 GS accordance to WEEE 2002/96/EC R (max) m DS(on) Halogen-free according to IEC 61249-2-21 V = 6V 520 GS Q 8 nC g APPLICATIONS Battery Management System LED Lighting SOT-26 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 150 V DS Gate-Source Voltage V 20 V GS T = 25C 1.4 C (Note 1) Continuous Drain Current I A D T = 25C 1.1 A Pulsed Drain Current I 5.6 A DM T = 25C 2.1 C Total Power Dissipation P W D T = 125C 0.4 C T = 25C 1.5 A Total Power Dissipation P W D T = 125C 0.3 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 59 C/W JC Junction to Ambient Thermal Resistance R 83 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board desig n. 1 Version: B1811 TSM4800N15CX6 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 150 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 2 2.9 3.5 GS DS D GS(TH) V Gate Threshold Voltage I = 250A -- -6.4 -- mV/C D Temperature Coefficient Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 GS DS GSS nA V = 0V, V = 150V -- -- 1 GS DS Drain-Source Leakage Current I A V = 0V, V = 150V DSS GS DS -- -- 100 T = 125C J V = 10V, I = 1.1A -- 392 480 Drain-Source On-State Resistance GS D R m (Note 2) DS(on) V = 6V, I = 1.1A -- 428 520 GS D (Note 2) V = 5V, I = 1.1A Forward Transconductance g -- 3.3 -- S DS D fs (Note 3) Dynamic V = 10V, V = 10V, GS DS Total Gate Charge Q -- 8 -- g I = 1.1A D Total Gate Charge Q -- 5 -- g nC V = 6V, V = 10V, GS DS Gate-Source Charge Q -- 2 -- gs I = 1.1A D Gate-Drain Charge Q -- 2.7 -- gd Input Capacitance C -- 332 -- iss V = 0V, V = 10V GS DS Output Capacitance C -- 20 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 1 -- rss Gate Resistance f = 1.0MHz R -- 3.5 -- g (Note 3) Switching Turn-On Delay Time t -- 5 -- d(on) Turn-On Rise Time t -- 18 -- V = 10V, V = 10V, r GS DS ns I = 1.1A, R = 2, Turn-Off Delay Time t -- 9 -- D G d(off) Turn-Off Fall Time t -- 18 -- f Source-Drain Diode (Note 2) Forward Voltage V -- -- 1.2 V V = 0V, I = 1.1A SD GS S Reverse Recovery Time t -- 51 -- ns rr I = 1.1A , S Reverse Recovery Charge Q -- 59 -- nC dI/dt = 100A/s rr Notes: 1. Silicon limited current only. 2. Pulse test: Pulse Width 300s, duty cycle 2%. 3. Switching time is essentially independent of operating temperature. ORDERING INFORMATION ORDERING CODE PACKAGE PACKING TSM4800N15CX6 RFG SOT-26 3,000pcs / 7 Reel 2 Version: B1811