TSM60NB1R4CP Taiwan Semiconductor N-Channel Power MOSFET 600V, 3A, 1.4 FEATURES KEY PERFORMANCE PARAMETERS Super-Junction technology PARAMETER VALUE UNIT High performance due to small figure-of-merit V 600 V DS High ruggedness performance R (max) 1.4 DS(on) High commutation performance Q 7.12 nC g 100% UIL tested Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS Power Supply Lighting TO-252 (DPAK) Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS T = 25C 3 A C (Note 1) Continuous Drain Current I D T = 100C 1.8 A C (Note 2) Pulsed Drain Current I 9 A DM Total Power Dissipation T = 25C P 28.4 W C DTOT (Note 3) Single Pulsed Avalanche Energy E 25 mJ AS (Note 3) Single Pulsed Avalanche Current I 1.0 A AS Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 4.4 C/W JC Junction to Ambient Thermal Resistance R 62 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. R shown below for single device operation on FR-4 PCB in still air. JA 1 Version: A1608 TSM60NB1R4CP Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 600 -- -- GS D DSS V Gate Threshold Voltage V = V , I = 250A V 2 3.3 4 V DS GS D GS(TH) Gate Body Leakage V = 30V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 600V, V = 0V I -- -- 1 A DS GS DSS Drain-Source On-State Resistance V = 10V, I = 0.9A R -- 1 1.4 GS D DS(on) (Note 4) (Note 5) Dynamic Total Gate Charge Q -- 7.12 -- g V = 380V, I = 3A, DS D Gate-Source Charge Q -- 3.52 -- nC gs V = 10V GS Gate-Drain Charge Q -- 1.62 -- gd Input Capacitance C -- 257.3 -- V = 100V, V = 0V, iss DS GS pF f = 1.0MHz Output Capacitance C -- 41.5 -- oss Gate Resistance F = 1MHz, open drain R -- 4.1 -- g (Note 6) Switching Turn-On Delay Time t -- 13.8 -- d(on) V = 380V, DD Turn-On Rise Time t -- 11.4 -- r R = 25, ns GEN Turn-Off Delay Time t -- 28 -- d(off) I = 3A, V = 10V, D GS Turn-Off Fall Time t -- 8.4 -- f Source-Drain Diode (Note 4) Forward Voltage I = 3A, V = 0V V -- -- 1.4 V S GS SD Reverse Recovery Time 126 -- -- ns t rr V = 200V, I = 1.5A R S Reverse Recovery Charge 0.637 -- -- C dI /dt = 100A/s Q F rr Notes: 1. Current limited by package. 2. Pulse width limited by the maximum junction temperature. o 3. L = 50mH, I = 1.0A, V = 50V, R = 25, Starting T = 25 C AS DD G J 4. Pulse test: PW 300s, duty cycle 2%. 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM60NB1R4CP ROG TO-252 (DPAK) 2,500pcs / 13 Reel 2 Version: A1608