Product Information

TDM3482

TDM3482 electronic component of Techcode

Datasheet
MOSFET N Trench 40V 43A (Tc) 2.5V @ 250uA 9.5 mΩ @ 15A,10V PPAK-3x3 RoHS

Manufacturer: Techcode
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3831 ea
Line Total: USD 1.92

3399 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1910 - Global Stock


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 5
Multiples : 5

Stock Image

TDM3482
Techcode

5 : USD 0.3957
50 : USD 0.3153
150 : USD 0.2807
500 : USD 0.2376
3000 : USD 0.2184
6000 : USD 0.207

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The TDM3482 is a N-type MOSFET (metal-oxide semiconductor field-effect transistor) manufactured by Techcode. It has a Trench structure, enabling excellent blocking performance. It supports a maximum drain-source voltage of 40V and a maximum drain current of 43A with a peak power dissipation of 10V. The transistor offers a low drain-source on-state resistance of 9.5 mΩ and a low threshold voltage of 2.5V. It has a PPAK-3x3 (PowerPAK ® Cell-3 x 3) packaging and is RoHS-compliant. The device supports a maximum gate-source leakage current of 250uA and a maximum gate-drain forward voltage drop of 15A.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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