2SK3541 TECH PUBLIC

2SK3541 electronic component of TECH PUBLIC
2SK3541 TECH PUBLIC
2SK3541 MOSFETs
2SK3541  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2SK3541 MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SK3541 MOSFETs are a product manufactured by TECH PUBLIC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. 2SK3541
Manufacturer: TECH PUBLIC
Category: MOSFETs
Description: SOT-723 MOSFETs ROHS
Datasheet: 2SK3541 Datasheet (PDF)
Price (USD)
20: USD 0.0562 ea
Line Total: USD 1.12 
Availability : 7527
  
Ship by Wed. 19 Nov to Tue. 25 Nov
QtyUnit Price
20$ 0.0562
200$ 0.0432
600$ 0.0268
2000$ 0.0212
8000$ 0.0168
16000$ 0.0154

Availability 7527
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0562
200$ 0.0432
600$ 0.0268
2000$ 0.0212
8000$ 0.0168
16000$ 0.0154

   
Manufacturer
Product Category
Category
Rohs
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We are delighted to provide the 2SK3541 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK3541 and other electronic components in the MOSFETs category and beyond.

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The 2SK3541 with SOT-723 MOSFETs ROHS is a power MOSFET manufactured by TECH PUBLIC. It is a P-Channel silicon gate high-density cell Power MOSFET designed to provide better conduction and reduce on-state resistance. The device suffers less from the effects of temperature as it is constructed using an epitaxial layer under a polysilicon gate. With a low gate threshold voltage and low input capacitance, this device is suitable for use in high-speed switching applications. It features a high density cell design which increases breakdown voltage and delivers a high current-carrying capability. It has a RoHS compliant lead-free finish and is packaged in a SOT-723 package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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