FDMC5614P TECH PUBLIC

FDMC5614P electronic component of TECH PUBLIC
FDMC5614P TECH PUBLIC
FDMC5614P MOSFETs
FDMC5614P  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDMC5614P MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDMC5614P MOSFETs are a product manufactured by TECH PUBLIC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FDMC5614P
Manufacturer: TECH PUBLIC
Category: MOSFETs
Description: DFN3x3-8 MOSFETs ROHS
Datasheet: FDMC5614P Datasheet (PDF)
Price (USD)
1: USD 0.5148 ea
Line Total: USD 0.51 
Availability : 1156
  
Ship by Thu. 13 Nov to Wed. 19 Nov
QtyUnit Price
1$ 0.5148
10$ 0.4538
30$ 0.4262
100$ 0.2948
500$ 0.226
1000$ 0.2204

Availability 1156
Ship by Thu. 13 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5148
10$ 0.4538
30$ 0.4262
100$ 0.2948
500$ 0.226
1000$ 0.2204

   
Manufacturer
Product Category
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We are delighted to provide the FDMC5614P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMC5614P and other electronic components in the MOSFETs category and beyond.

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The FDMC5614P is an N-channel enhancement-mode field-effect transistor manufactured by Tech Public with a small DFN3x3-8 package in a RoHS-compliant form. It is optimized for low on-resistance and is ideal for switching applications. It features single-sided copper source and drain contacts, allowing for a lower RDSON and higher current capacities. The source and drain pins eliminate the need for a second ground connection. It also features an integrally bonded body diode which improves resistance to power surges and speeds up recovery times. This MOSFET is suitable for a variety of automotive, industrial, and consumer applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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