NTGS5120PT1G TECH PUBLIC

NTGS5120PT1G electronic component of TECH PUBLIC
NTGS5120PT1G TECH PUBLIC
NTGS5120PT1G MOSFETs
NTGS5120PT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTGS5120PT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTGS5120PT1G MOSFETs are a product manufactured by TECH PUBLIC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NTGS5120PT1G
Manufacturer: TECH PUBLIC
Category: MOSFETs
Description: SOT23-6 MOSFETs ROHS
Datasheet: NTGS5120PT1G Datasheet (PDF)
Price (USD)
5: USD 0.311 ea
Line Total: USD 1.56 
Availability : 25079
  
Ship by Thu. 21 Aug to Tue. 26 Aug
QtyUnit Price
5$ 0.311
50$ 0.2412
150$ 0.1583
500$ 0.1173
3000$ 0.106
6000$ 0.0994

Availability 25079
Ship by Thu. 21 Aug to Tue. 26 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.311
50$ 0.2412
150$ 0.1583
500$ 0.1173
3000$ 0.106
6000$ 0.0994

   
Manufacturer
Product Category
Category
Rohs
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We are delighted to provide the NTGS5120PT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTGS5120PT1G and other electronic components in the MOSFETs category and beyond.

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The NTGS5120PT1G is a MOSFET manufactured by TECH PUBLIC in a SOT23-6 package and conforms to ROHS standards. This MOSFET device is composed of five independent vertical N-channel MOSFETs in a single device package. It has very low RDS(ON) of 0.56O and Gate Charge(Qg) of 2.1nC, along with improved output current capability and better thermal properties for enhanced power density and efficiency. It also features very low power consumption with 2.6V gate drive in forced-mode operation. This device is suitable for a variety of applications such as switching, motor control and load management.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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