X-On Electronics has gained recognition as a prominent supplier of CSD86330Q3D mosfet across the USA, India, Europe, Australia, and various other global locations. CSD86330Q3D mosfet are a product manufactured by Texas Instruments. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

CSD86330Q3D Texas Instruments

CSD86330Q3D electronic component of Texas Instruments
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Part No.CSD86330Q3D
Manufacturer: Texas Instruments
Category:MOSFET
Description: Mosfet Array 2 N-Channel (Half Bridge) 25V 20A 6W Surface Mount 8-LSON (3.3x3.3)
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.024 ea
Line Total: USD 2.02

Availability - 22070
Ships to you between
Tue. 18 Jun to Thu. 20 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between Wed. 12 Jun to Tue. 18 Jun

MOQ : 1
Multiples : 1
1 : USD 2.2903
10 : USD 2.028
100 : USD 1.7407
250 : USD 1.6575
500 : USD 1.4381
1000 : USD 1.2675

19 - WHS 2


Ships to you between
Wed. 19 Jun to Mon. 24 Jun

MOQ : 1
Multiples : 1
1 : USD 10.9622
10 : USD 9.6131
30 : USD 8.7883
100 : USD 8.0991

22070 - WHS 3


Ships to you between Tue. 18 Jun to Thu. 20 Jun

MOQ : 1
Multiples : 1
1 : USD 2.024
10 : USD 1.725
100 : USD 1.426
250 : USD 1.3915
500 : USD 1.219
1000 : USD 1.0546
2500 : USD 1.0132

1381 - WHS 4


Ships to you between Wed. 12 Jun to Tue. 18 Jun

MOQ : 7
Multiples : 1
7 : USD 2.6569
10 : USD 2.22
25 : USD 2.1978
100 : USD 1.7898
250 : USD 1.7537
500 : USD 1.4871
1000 : USD 1.1472

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Development Kit
Fall Time
Hts Code
Mxhts
Product Type
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Subcategory
Taric
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Typical Turn-On Delay Time
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We are delighted to provide the CSD86330Q3D from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CSD86330Q3D and other electronic components in the MOSFET category and beyond.

The CSD86330Q3D from Texas Instruments is an integrated power stage solution for motor drives, power supplies, and other power applications. This part is a MOSFET array consisting of two N-Channel MOSFETs in a Half Bridge configuration with a maximum voltage rating of 25V, maximum current rating of 20A, and a maximum power rating of 6W. This power stage is rated to switch at frequencies up to 5MHz, and has an integrated bootstrap diode for use in high-side switching applications. The MOSFETs are surface-mounted in an 8-LSON (3.3x3.3) thin profile profile package. The package also contains drain-source and gate-source parasitic protection diodes to protect the circuit against reverse voltages. Additionally, it comes with built-in ESD protection, current sensing, under-voltage lockout, integrated gate drivers, and short-circuit protection for a complete power solution in a wide variety of applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NAT SEMI
NATIONAL SEMI
NATIONAL SEMICONDUCT
National Semiconductor
NS4
NSC
TEXAS
TEXAS INST
TEXAS INST / KLIXON
TEXAS INSTRUMENT
TEXAS INSTRUMENTS
TI
TI9

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