Product Information

1SS321,LF

1SS321,LF electronic component of Toshiba

Datasheet
Schottky Diodes & Rectifiers Small Signal Schottky Barrier Diode VR=10V, IO=0.05A, in SOT-346 package
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9471 ea
Line Total: USD 0.95

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

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1SS321,LF
Toshiba

1 : USD 0.9471
10 : USD 0.7911
100 : USD 0.1683
500 : USD 0.1103
1000 : USD 0.0758
3000 : USD 0.0579
9000 : USD 0.049
24000 : USD 0.0468
45000 : USD 0.0412

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Additional Infomation About Product

1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage : V = 0.54V (typ.) F (3) Low reverse surrent : I = 5A (max) R Small package : SC59 Note1: For detail information, please contact to our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O JEDEC TO236MOD Power dissipation P 150 mW JEITA SC59 TOSHIBA 2-3F1S Junction temperature T 125 C j Weight: 12 mg (typ.) Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1mA 0.28 F (1) F Forward voltage V I = 10mA 0.36 V F (2) F V I = 100mA 0.54 0.60 F (3) F Reverse current I V = 40V 5 A R R Total capacitance C V = 0 V, f = 1MHz 18 25 pF T R Marking Start of commercial production 1986-03 1 2017-10-19 1SS294 2 2017-10-19

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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