1SV308(TH3,F) Toshiba

1SV308(TH3,F) electronic component of Toshiba Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 1SV308(TH3,F) across the USA, India, Europe, Australia, and various other global locations. 1SV308(TH3,F) are a product manufactured by Toshiba. We provide cost-effective solutions for 1SV308(TH3,F), ensuring timely deliveries around the world.

Part No. 1SV308(TH3,F)
Manufacturer: Toshiba
Category: Unclassified
Description: 1SV308(TH3,F)
High-efficiency N-channel 4-pin SOT-23 Power MOSFET.
Datasheet:
Price (USD)
4000: USD 0.1252 ea
Line Total: USD 500.8 
Availability : 0
  
QtyUnit Price
4000$ 0.1252
4000$ 0.1252
4000$ 0.1217
8000$ 0.1217
24000$ 0.117
52000$ 0.117

Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 4000
Multiples : 1
QtyUnit Price
4000$ 0.1252
4000$ 0.1252
4000$ 0.1217
8000$ 0.1217
24000$ 0.117
52000$ 0.117

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1SV308(TH3,F) from our Toshiba manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1SV308(TH3,F) and other electronic components in the Toshiba manufacturer and beyond.

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The 1SV308(TH3,F) is a Power MOSFET from Toshiba. It is an N-channel MOSFET that features an advanced trench gate structure. This device has an ultra-low on-resistance of 1.2 mO and a maximum drain-source voltage of 30V. It also has very fast switching speeds, making it suitable for use in high-frequency switching applications. The device is housed in a TO-263-3L package and is RoHS compliant.

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