DMN24H11DS N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary Low Gate Threshold Voltage I D V R (BR)DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 11 V = 10V 0.27A GS 240V Small Surface Mount Package 12 V = 4.5V 0.26A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the Mechanical Data on-state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Case: SOT23 applications. Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 e3 DC-DC Converters Lead Free Plating (Matte Tin Finish annealed over Alloy 42 Power management functions leadframe). Battery Operated Systems and Solid-State Relays Terminal Connections: See Diagram Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Weight: 0.006 grams (approximate) Memories, Transistors, etc D D G G S S Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN24H11DS-7 SOT23 3,000/Tape & Reel DMN24H11DS-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN24H11DS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 240 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 0.27 A A Continuous Drain Current (Note 6) V = 10V I GS D State 0.22 T = +70C A Pulsed Drain Current (10 s pulse, duty cycle 1%) I 0.8 A DM Maximum Body Diode Continuous Current (Note 5) I 0.8 A S Peak diode recovery dv/dt dv/dt 6.0 V/ns Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 0.75 Total Power Dissipation P W D (Note 6) 1.2 (Note 5) 166 Thermal Resistance, Junction to Ambient R JA (Note 6) 104 C/W Thermal Resistance, Junction to Case (Note 6) 35 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 240 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 100 nA I V = 240V, V = 0V DSS DS GS Gate-Body Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.0 2.0 3.0 V V V = V , I = 250A GS(th) DS GS D 3.7 11 V = 10V, I = 0.3A GS D Static Drain-Source On-Resistance R DS (ON) 4.0 12 V = 4.5V, I = 0.2A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 0.1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 76.8 Input Capacitance C iss V = 25V, V = 0V, DS GS 6.9 Output Capacitance C pF oss f = 1.0MHz 4.1 Reverse Transfer Capacitance C rss Gate Resistance R 17 V = 0V, V = 0V, f = 1.0MHz G DS GS 3.7 Total Gate Charge Q g V = 192V, V = 10V, DS GS Gate-Source Charge 0.3 nC Q gs I = 0.1A D Gate-Drain Charge 2.1 Q gd Turn-On Delay Time 4.8 t D(on) Turn-On Rise Time 4.7 t r V = 120V, I = 0.1A, DS D nS 17.5 V = 10V, R = 6.0 Turn-Off Delay Time t GS G D(off) 102.3 Turn-Off Fall Time t f 45.6 Reverse Recovery Time t nS rr V = 100V, I = 1.0A, R F 51.6 di/dt = 100A/s Reverse Recovery Charge Q nC rr Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 April 2014 DMN24H11DS Diodes Incorporated www.diodes.com Document number: DS37092 Rev. 3 - 2 ADVANCED INFORMATION