SSM3J35CT,L3F(T Toshiba

Name: SSM3J35CT,L3F(T
Brand: Toshiba
SKU: SSM3J35CTL3FT_Toshiba
Availability: InStock
Rating: 5 (11 reviews)

SSM3J35CT,L3F(T electronic component of Toshiba

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SSM3J35CT,L3F(T MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3J35CT,L3F(T MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SSM3J35CT,L3F(T
Manufacturer:	Toshiba
Category:	MOSFETs
Description:	MOSFET P Trench 20V 100mA 1V @ 1mA 8 Î© @ 50mA,4V CST3 RoHS
Datasheet:	SSM3J35CT,L3F(T Datasheet (PDF)

Price (USD)

5: USD 0.2132 ea
Line Total: USD 1.07

Availability : 17692

Ship by Wed. 19 Nov to Tue. 25 Nov

Qty Unit Price
5 $ 0.2132
50 $ 0.1848
150 $ 0.1295
500 $ 0.1061
2500 $ 0.1015
5000 $ 0.099

SSM3J35CT,L3F(T More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 17692

Ship by Wed. 19 Nov to Tue. 25 Nov

MOQ : 5
Multiples : 5

Qty Unit Price
5 $ 0.2132
50 $ 0.1848
150 $ 0.1295
500 $ 0.1061
2500 $ 0.1015
5000 $ 0.099

Specifications

Manufacturer

Toshiba Toshiba

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

CST3 CST3

Brand Category

Toshiba Toshiba

Fet Type

p trench p trench

Drain To Source Voltagevdss

20 V 20 V

Continuous Drain Current Id @ 25°C

100 mA 100 mA

Vgsth Max @ Id

1v @ 1m A 1v @ 1m A

Rds On Max @ Id Vgs

8 @ 50ma,4v 8 @ 50ma,4v

Power Dissipation Max

100 mW 100 mW

Drain Source Voltage Vdss

20 V 20 V

Continuous Drain Current Id

100 mA 100 mA

Power Dissipation Pd

100 mW 100 mW

Drain Source On Resistance Rdson@Vgs Id

8 Ohms @4V , 50mA 8 Ohms @4V , 50mA

Gate Threshold Voltage Vgsth@Id

1 V @1 mA 1 V @1 mA

Type

P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

SSM3J35CT,L3F(T Alternative Parts

We are delighted to provide the SSM3J35CT,L3F(T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3J35CT,L3F(T and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SSM3J35CT,L3F(T is a surface mount MOSFET P Trench with a 20V max drain-source voltage and a max drain current of 100mA. It has a threshold voltage of 1V and a gate-source leakage current of 1mA. The drain-source on-resistance at 50mA is 8O and the reverse transfer capacitance is 4V. The device is manufactured by Toshiba and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Qty	Unit Price
5	$ 0.2132
50	$ 0.1848
150	$ 0.1295
500	$ 0.1061
2500	$ 0.1015
5000	$ 0.099

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