TC75S103F TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S103F Single Operational Amplifier Low supply current Features Input, Output Full Range type (Rail to Rail) Low supply current 100 A (Typ.) VDD=1.8V Low Input offset voltage 1.5mV (Max) VDD=1.8V Wide Operating Voltage Range 1.8V to 5.5V Absolute Maximum Ratings (Ta = 25C) SMV Characteristics Symbol Rating Unit Weight: Supply voltage V - V 6 V DD SS SMV (SOT-25)(SC-74A) :14 mg (typ.) Differential input voltage DVIN 6 V Input voltage V V to V V IN DD SS Output voltage V V -0.3V to V +0.3V V + 6V V OUT SS DD SS Output current I 25 mA OUT Power dissipation PD 200 mW Operating temperature T -40 to 105 C opr Storage temperature T -55 to 150 C stg Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Operating Ratings (Ta = -40 to 105C) Characteristics Symbol Rating Unit Supply voltage V - V 1.8 to 5.5 V DD SS Note2: A higher load capacitance will increase the risk of voltage oscillation. Allow sufficient capacitance value when designing your circuit and using this product to prevent voltage oscillation. Note3: This device is sensitive to electrostatic discharge. Please ensure equipment, operator and tools are adequately earthed when handling. Start of commercial production 2020-09 1 2020-09-22 2020 Toshiba Electronic Devices & Storage Corporation TC75S103F Marking (top view) Pin Assignment (top view) IN (-) V DD 5 4 5 4 - S A 3 + 1 2 3 1 2 3 OUT V IN (+) SS Electrical Characteristics DC Characteristics (VDD = 1.8V, VSS = GND, Ta = 25C, VIN = VDD/2, unless otherwise noted.) Test Characteristics Symbol Test Condition Min Typ. Max Unit Circuit R = 1 k, R = 100k S F -1.85 0.3 1.85 mV Ta = -40 to 105C Input offset voltage V IO 1 R = 1 k, R = 100k S F -1.5 0.3 1.5 mV Ta = 25C Input offset voltage drift V drift R = 1 k, R = 100k - 1 - V/C IO 1 S F Input offset current I - - 1 - pA IO 2 Input bias current I - - 1 - pA I 2 Common mode input voltage CMV R = 1 k, R = 100k 0 - V V IN 3 S F DD Voltage gain (open loop) G - 85 100 - dB V - V R 100 k 1.7 - - OH 4 L Maximum output voltage V V R 100 k - - 0.1 OL 5 L Common mode input signal - CMRR V = 0 to 1.8V 60 80 dB 3 IN rejection ratio Supply voltage rejection ratio SVRR V = 1.8 to 5.0V 70 85 - dB 1 DD Supply current I - - 100 165 A DD 6 Source current I - 1.2 2 - mA source 7 Sink current I - 1 2 - mA sink 8 AC Characteristics (VDD = 0.9 V, VSS = -0.9 V, Ta = 25C) Test Characteristics Symbol Test Condition Min Typ. Max Unit Circuit Unity Gain Cross Frequency f - - - 0.3 - MHz T Phase margin m - - - 40 - degrees - - Slew Rate SR - 0.52 - V/ s 2 2020-09-22 2020 Toshiba Electronic Devices & Storage Corporation