Product Information

TSF4N60M

Name: TSF4N60M
Brand: Truesemi
SKU: TSF4N60M_Truesemi
Availability: OutOfStock
Rating: 5 (11 reviews)

TSF4N60M electronic component of Truesemi

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Datasheet

MOSFET N Trench 600V 4A (Tc) 5V @ 250uA 2.5 Î© @ 2A,10V TO-220F RoHS

Manufacturer: Truesemi

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.342 ea
Line Total: USD 0.34

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Mon. 27 May to Thu. 30 May MOQ : 1 Multiples : 1 TSF4N60M Truesemi	1 : USD 0.342 10 : USD 0.2835 30 : USD 0.2411 100 : USD 0.2061 500 : USD 0.2002 1000 : USD 0.1973

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Additional Infomation About Product

The TSF4N60M is a Four N-channel MOSFET produced by Truesemi. It has a trench 600V 4A rating, a 5V gate-to-source threshold voltage (Tc) and a 250uA gate-to-source leakage current rating. It has a 2.5O drain-to-source on-resistance at 2A and a 10V drain-to-source breakdown voltage rating. The component is enclosed in a TO-220F package and meets ROHS standards. This part is suitable for applications such as motor and power supply controls, audio amplifiers, and switching regulators.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Truesemi

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Manufacturer Truesemi Truesemi
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package TO - 220F TO - 220F
Brand Category Truesemi Truesemi
Fet Type n trench n trench
Drain To Source Voltagevdss 600 V 600 V
Continuous Drain Current Id @ 25°C 4 A (t C) 4 A (t C)
Vgsth Max @ Id 5v @ 250ua 5v @ 250ua
Rds On Max @ Id Vgs 2.5 @ 2a,10v 2.5 @ 2a,10v
Power Dissipation Max 33 W 33 W