650V-6.7mW SiC FET Rev. B, December 2019 DATASHEET Description This SiC FET device is based on a unique cascode circuit UF3SC065007K4S configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The devices standard gate-drive characteristics allows for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra- low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application CASE requiring standard gate drive. CASE D (1) Features w Typical on-resistance R of 6.7mW DS(on),typ w Maximum operating temperature of 175C G (4) w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance KS (3) w ESD protected, HBM class 2 S (2) w TO-247-4L package for faster switching, clean gate waveforms 1 2 3 4 Typical applications Part Number Package Marking w EV charging UF3SC065007K4S TO-247-4L UF3SC065007K4S w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3SC065007K4S Rev. B, December 2019 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 650 V DS Gate-source voltage V DC -20 to +20 V GS 1 T < 135C I 120 A Continuous drain current C D 2 I T = 25C Pulsed drain current 550 A DM C 3 E L=15mH, I =8.6A Single pulsed avalanche energy 555 mJ AS AS Power dissipation P T = 25C 789 W tot C Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. Limited by bondwires 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.15 0.19 C/W qJC Datasheet: UF3SC065007K4S Rev. B, December 2019 2