VSD011N10MS-G Vanguard

VSD011N10MS-G electronic component of Vanguard
VSD011N10MS-G Vanguard
VSD011N10MS-G MOSFETs
VSD011N10MS-G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of VSD011N10MS-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. VSD011N10MS-G MOSFETs are a product manufactured by Vanguard. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. VSD011N10MS-G
Manufacturer: Vanguard
Category: MOSFETs
Description: TO-252 MOSFETs ROHS
Datasheet: VSD011N10MS-G Datasheet (PDF)
Price (USD)
1: USD 0.517 ea
Line Total: USD 0.52 
Availability : 0
  
QtyUnit Price
1$ 0.517
10$ 0.4161
30$ 0.3737
100$ 0.3192
500$ 0.2808
1000$ 0.2666

Availability 0
Ship by Fri. 05 Sep to Wed. 10 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.517
10$ 0.4161
30$ 0.3737
100$ 0.3192
500$ 0.2808
1000$ 0.2666

   
Manufacturer
Product Category
Category
Rohs
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VSD011N10MS-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VSD011N10MS-G and other electronic components in the MOSFETs category and beyond.

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The VSD011N10MS-G is a TO-252 MOSFET manufactured by Vanguard that is compliant with the Restriction of Hazardous Substances (RoHS) directive. It is a vertical double-diffused MOSFET with an N-channel and a maximum drain to source voltage of 100 volts. This device is designed for use in power management applications such as DC-to-DC or AC-to-DC converters, and other power supply designs. It has very low on-state resistances and can handle avalanche-like loads. The package is also halogen-free for improved environmental safety.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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