VSO009N06MS-GA Vanguard

VSO009N06MS-GA electronic component of Vanguard
VSO009N06MS-GA Vanguard
VSO009N06MS-GA MOSFETs
VSO009N06MS-GA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of VSO009N06MS-GA MOSFETs across the USA, India, Europe, Australia, and various other global locations. VSO009N06MS-GA MOSFETs are a product manufactured by Vanguard. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. VSO009N06MS-GA
Manufacturer: Vanguard
Category: MOSFETs
Description: SOP-8 MOSFETs ROHS
Datasheet: VSO009N06MS-GA Datasheet (PDF)
Price (USD)
5: USD 0.4743 ea
Line Total: USD 2.37 
Availability : 0
  
QtyUnit Price
5$ 0.4743
50$ 0.3919
150$ 0.3565
500$ 0.3124
3000$ 0.2927
6000$ 0.281

Availability 0
Ship by Fri. 05 Sep to Wed. 10 Sep
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.4743
50$ 0.3919
150$ 0.3565
500$ 0.3124
3000$ 0.2927
6000$ 0.281

   
Manufacturer
Product Category
Category
Rohs
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VSO009N06MS-GA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VSO009N06MS-GA and other electronic components in the MOSFETs category and beyond.

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The VSO009N06MS-GA is a SOP-8 MOSFET from the Vanguard series that is RoHS compliant. The product is a N-Channel enhancement mode insulated gate field effect transistor. It is designed for users who require superior electrical performance, robustness, and a more economical package than is typcially available. This MOSFET can have drain-source voltage up to 600 volts, drain current up to 9A, is designed to work at temperatures up to 175 degrees Celsius and has a total power dissipation of 7.2 watts. The device also has an Rds(on) of 0.009 ohms.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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