X-On Electronics has gained recognition as a prominent supplier of FDD2582 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDD2582 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDD2582 VBsemi Elec

FDD2582 electronic component of VBsemi Elec
FDD2582 VBsemi Elec
FDD2582 MOSFETs
FDD2582  Semiconductors

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See Product Specifications
Part No. FDD2582
Manufacturer: VBsemi Elec
Category: MOSFETs
Description: TO-252 MOSFETs ROHS
Datasheet: FDD2582 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6388 ea
Line Total: USD 0.64 
Availability - 46
Ship by Wed. 09 Jul to Mon. 14 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
46
Ship by Wed. 09 Jul to Mon. 14 Jul
MOQ : 1
Multiples : 1
1 : USD 0.6388
10 : USD 0.6234
30 : USD 0.6132
100 : USD 0.407

   
Manufacturer
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We are delighted to provide the FDD2582 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDD2582 and other electronic components in the MOSFETs category and beyond.

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The FDD2582 with TO-252 MOSFETs ROHS manufactured by VBsemi Elec is a high-performance, cost-effective, and RoHS-compliant power field-effect transistor. It is built with a versatile, high-density N-channel and P-channel silicon technology. This device provides excellent Rds(on) and Gate source-drain avalanche ballistics. It is designed to function as an upgrade from existing solutions with lower on-resistance and higher power ratings. It is suitable for a wide variety of flooding, smart LEDs, boosters, and lighting-applications up to 100V. It also features an improved TO-252 package (SC-75) to help reduce space requirements in high power applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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