FDD2582 VBsemi Elec

FDD2582 electronic component of VBsemi Elec
FDD2582 VBsemi Elec
FDD2582 MOSFETs
FDD2582 Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FDD2582 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDD2582 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FDD2582
Manufacturer: VBsemi Elec
Category: MOSFETs
Description: TO-252 MOSFETs ROHS
Datasheet: FDD2582 Datasheet (PDF)
Price (USD)
1: USD 0.6388 ea
Line Total: USD 0.64 
Availability : 46
  
Ship by Fri. 03 Oct to Thu. 09 Oct
QtyUnit Price
1$ 0.6388
10$ 0.6234
30$ 0.6132
100$ 0.407

 FDD2582 More Buying Options & Price Grid(s)
Availability 46
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6388
10$ 0.6234
30$ 0.6132
100$ 0.407

Specifications

   
Manufacturer
Product Category
Category
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Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the FDD2582 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDD2582 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The FDD2582 with TO-252 MOSFETs ROHS manufactured by VBsemi Elec is a high-performance, cost-effective, and RoHS-compliant power field-effect transistor. It is built with a versatile, high-density N-channel and P-channel silicon technology. This device provides excellent Rds(on) and Gate source-drain avalanche ballistics. It is designed to function as an upgrade from existing solutions with lower on-resistance and higher power ratings. It is suitable for a wide variety of flooding, smart LEDs, boosters, and lighting-applications up to 100V. It also features an improved TO-252 package (SC-75) to help reduce space requirements in high power applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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