FQP85N06 VBsemi Elec

FQP85N06 electronic component of VBsemi Elec
FQP85N06 VBsemi Elec
FQP85N06 MOSFETs
FQP85N06  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FQP85N06 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQP85N06 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. FQP85N06
Manufacturer: VBsemi Elec
Category: MOSFETs
Description: TO-220AB MOSFETs ROHS
Datasheet: FQP85N06 Datasheet (PDF)
Price (USD)
1: USD 1.404 ea
Line Total: USD 1.4 
Availability : 122
  
Ship by Mon. 27 Oct to Fri. 31 Oct
QtyUnit Price
1$ 1.404
10$ 1.1434
50$ 0.6197
100$ 0.5335
500$ 0.4822
1000$ 0.4547

Availability 122
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.404
10$ 1.1434
50$ 0.6197
100$ 0.5335
500$ 0.4822
1000$ 0.4547

   
Manufacturer
Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FQP85N06 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQP85N06 and other electronic components in the MOSFETs category and beyond.

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The FQP85N06 with TO-220AB MOSFETs ROHS manufactured by VBsemi Elec is a MOSFET (metal-oxide-semiconductor field-effect transistor) device in a TO-220AB surface mount package. It is a high-density device that has an excellent power dissipation and very low switching and thermal resistance. It is a N-channel device with a low voltage threshold and a low on resistance. The device is RoHS compliant and is designed to be both energy efficient and reliable. It can operate from -55°C to 150°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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