Si1024X Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (mA) DS DS(on) D Definition 0.70 at V = 4.5 V 600 GS TrenchFET Power MOSFET: 1.8 V Rated Very Small Footprint 20 0.85 at V = 2.5 V 500 GS High-Side Switching 1.25 at V = 1.8 V 350 GS Low On-Resistance: 0.7 Low Threshold: 0.8 V (typ.) Fast Switching Speed: 10 ns 1.8 V Operation Gate-Source ESD Protected: 2000 V Compliant to RoHS Directive 2002/95/EC SOT-563 SC-89 BENEFITS 1 6 S D 1 1 Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation 100 2 5 G G 1 2 High-Speed Circuits Marking Code: C 100 Low Battery Voltage Operation D S 34 2 2 APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Top View Memories Ordering Information: Si1024X-T1-GE3 (Lead (Pb)-free and Halogen-free) Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 20 DS V Gate-Source Voltage V 6 GS T = 25 C 515 485 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 370 350 A mA b I 650 Pulsed Drain Current DM a I 450 380 Continuous Source Current (Diode Conduction) S T = 25 C 280 250 A a P mW Maximum Power Dissipation D T = 85 C 145 130 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71170 www.vishay.com S11-0854-Rev. E, 02-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si1024X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.45 0.9V GS(th) DS GS D I V = 0 V, V = 4.5 V Gate-Body Leakage 0.5 1 A GSS DS GS V = 20 V, V = 0 V 0.3 100 nA DS GS I Zero Gate Voltage Drain Current DSS V = 20 V, V = 0 V, T = 85 C 5A DS GS J a I V = 5 V, V = 4.5 V 700 mA On-State Drain Current D(on) DS GS V = 4.5 V, I = 600 mA 0.41 0.70 GS D Drain-Source On-State R V = 2.5 V, I = 500 mA 0.53 0.85 DS(on) GS D a Resistance V = 1.8 V, I = 350 mA 0.70 1.25 GS D a g V = 10 V, I = 400 mA 1 S Forward Transconductance fs DS D a V I = 150 mA, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 750 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 250 mA 75 pC gs DS GS D Q Gate-Drain Charge 225 gd Turn-On Time t 10 V = 10 V, R = 47 d(on) DD L ns I 200 mA, V = 4.5 V, R = 10 t Turn-Off Time D GEN g 36 d(off) Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise noted) A 1.0 1200 T = - 55 C C V = 5 V thru 1.8 V GS 1000 0.8 25 C 800 0.6 125 C 600 0.4 400 0.2 200 1 V 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71170 2 S11-0854-Rev. E, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (mA) D