Si1023X Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (mA) DS DS(on) D Definition 1.2 at V = - 4.5 V - 350 GS TrenchFET Power MOSFET: 1.8 V Rated Very Small Footprint - 20 1.6 at V = - 2.5 V - 300 GS High-Side Switching 2.7 at V = - 1.8 V - 150 GS Low On-Resistance: 1.2 Low Threshold: 0.8 V (typ.) Fast Switching Speed: 14 ns 1.8 V Operation Gate-Source ESD Protected: 2000 V Compliant to RoHS Directive 2002/95/EC SOT-563 SC-89 BENEFITS Ease in Driving Switches S 1 6 D 1 1 Low Offset (Error) Voltage Low-Voltage Operation Marking Code: B 2 5 G G 1 2 High-Speed Circuits Low Battery Voltage Operation D 3 4 S 2 2 APPLICATIONS Top View Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Ordering Information: Si1023X-T1-GE3 (Lead (Pb)-free and Halogen-free) Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 6 GS T = 25 C - 390 - 370 A a I Continuous Drain Current (T = 150 C) D J T = 85 C - 280 - 265 A mA b I - 650 Pulsed Drain Current DM a I - 450 - 380 Continuous Source Current (Diode Conduction) S T = 25 C 280 250 A a P mW Maximum Power Dissipation D T = 85 C 145 130 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71169 www.vishay.com S10-2432-Rev. C, 25-Oct-10 1Si1023X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.45 V GS(th) DS GS D I V = 0 V, V = 4.5 V Gate-Body Leakage 1 2 A GSS DS GS V = - 16 V, V = 0 V - 0.3 - 100 nA DS GS I Zero Gate Voltage Drain Current DSS V = - 16 V, V = 0 V, T = 85 C - 5 A DS GS J a I V = - 5 V, V = - 4.5 V - 700 mA On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 350 mA 0.8 1.2 GS D Drain-Source On-State R V = - 2.5 V, I = - 300 mA 1.2 1.6 DS(on) GS D a Resistance V = - 1.8 V, I = - 150 mA 1.8 2.7 GS D a g V = - 10 V, I = - 250 mA 0.4 S Forward Transconductance fs DS D a V I = - 150 mA, V = 0 V - 0.8 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 1500 g Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 250 mA 150 pC gs DS GS D Q Gate-Drain Charge 450 gd Turn-On Time t 14 V = -10 V, R = 47 d(on) DD L ns I - 200 mA, V = - 4.5 V, R = 10 t Turn-Off Time D GEN g 46 d(off) Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise noted) A 1.0 1000 V = 5 V thru 3 V GS T = - 55 C J 2.5 V 0.8 800 25 C 0.6 600 125 C 2 V 0.4 400 1.8 V 0.2 200 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71169 2 S10-2432-Rev. C, 25-Oct-10 I - Drain Current (A) D I - Drain Current (mA) D