Product Information

SISS92DN-T1-GE3

SISS92DN-T1-GE3 electronic component of Vishay

Datasheet
MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5734 ea
Line Total: USD 1.57

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 6000
Multiples : 3000
6000 : USD 0.7778
9000 : USD 0.77
12000 : USD 0.7623
15000 : USD 0.7547
24000 : USD 0.7471
30000 : USD 0.7397
45000 : USD 0.7323
75000 : USD 0.725
150000 : USD 0.7178

0 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 1.5224
10 : USD 1.2121
100 : USD 0.9418
500 : USD 0.7969
1000 : USD 0.5875
5000 : USD 0.5796

0 - WHS 3


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 2.8354
10 : USD 2.4336
30 : USD 2.1811
100 : USD 1.9226
500 : USD 1.8055
1000 : USD 1.7551

0 - WHS 4


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1
1 : USD 3.2363
10 : USD 1.2082
100 : USD 0.9041
500 : USD 0.7467
1000 : USD 0.5903
3000 : USD 0.553

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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The SISS92DN-T1-GE3 with MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S is a secure isolator manufactured by Vishay. It is a 600W, dual-channel SIPMOS FET-based smart switch that is capable of providing efficient, stable power. It offers a direct current (DC) bus voltage of up to 250V, along with a wide gate-to-source voltage range (-20V to +20V) for low-side driving. The device has an eight-pin powerPAK package and a low thermal resistance of 4.7°C/W, which helps reduce system power losses and improves overall efficiency. Additionally, the device features overcurrent protection and a fast shut-down time of up to 250ns.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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