SQA411CEJW-T1_GE3 Vishay

SQA411CEJW-T1_GE3 electronic component of Vishay
SQA411CEJW-T1_GE3 Vishay
SQA411CEJW-T1_GE3 MOSFETs
SQA411CEJW-T1_GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SQA411CEJW-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQA411CEJW-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SQA411CEJW-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET
Datasheet: SQA411CEJW-T1_GE3 Datasheet (PDF)
Price (USD)
1: USD 0.6326 ea
Line Total: USD 0.63 
Availability : 0
  
QtyUnit Price
1$ 0.6326
10$ 0.4841
100$ 0.3052
500$ 0.2306
1000$ 0.2056
3000$ 0.1772
6000$ 0.1772
9000$ 0.1659

Availability 822
Ship by Tue. 26 Aug to Fri. 29 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5148
10$ 0.4458
30$ 0.418
100$ 0.2846
500$ 0.2466
1000$ 0.2392

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SQA411CEJW-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQA411CEJW-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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2.05 mm2.05 mm SQA411CEJW www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PowerPAK SC-70W-6L Single TrenchFET power MOSFET D DD 66 AEC-Q101 qualified SS 55 44 Wettable flank terminals 100 % R and UIS tested g Material categorization: 11 for definitions of compliance please see SS 22 DD 77 www.vishay.com/doc 99912 33 DD 11 G S Top View Bottom View Marking Code: Q8XXXX G PRODUCT SUMMARY V (V) -60 DS R () at V = -10 V 0.1550 DS(on) GS R () at V = -4.5 V 0.2130 DS(on) GS D I (A) -6.46 D P-Channel MOSFET Configuration Single ORDERING INFORMATION Package PowerPAK SC-70W-6L SQA411CEJW Lead (Pb)-free and halogen-free (for detailed order number please see www.vishay.com/doc 79776) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -60 DS V Gate-source voltage V 20 GS T = 25 C -6.46 C Continuous drain current I D T = 125 C -3.73 C a Continuous source current (diode conduction) I -9 A S b Pulsed drain current I -20 DM Single pulse avalanche current I -14 AS L = 0.1 mH Single pulse avalanche energy E 9.8 mJ AS T = 25 C 13.6 C Maximum power dissipation P W D T = 125 C 4.5 C Operating junction and storage temperature range T , T -55 to +175 J stg C d, e Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-ambient PCB mount R 90 thJA C/W Junction-to-case (drain) R 11 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70W-6L is a leadless package and features wettable flank terminals. The end of the lead terminal is plated with tin. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S21-1147-Rev. A, 06-Dec-2021 Document Number: 63171 1 For technical questions, contact: automos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2.05 mm05 mmSQA411CEJW www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -60 - - DS GS D V Gate-source threshold voltage V V = V , I = -250 A -1.5 -2.0 -2.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -60 V - - -1 GS DS Zero gate voltage drain current I V = 0 V V = -60 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -60 V, T = 175 C - - -250 GS DS J a On-state drain current I V = -10 V V -5 V -6 - - A D(on) GS DS V = -10 V I = -3.5 A - 0.1255 0.1550 GS D V = -10 V I = -3.5 A, T = 125 C - - 0.2639 GS D J a Drain-source on-state resistance R DS(on) V = -10 V I = -3.5 A, T = 175 C - - 0.3261 GS D J V = -4.5 V I = -3 A - 0.1645 0.2130 GS D b Forward transconductance g V = -15 V, I = -3.5 A - 6 - S fs DS D b Dynamic Input capacitance C - 421 590 iss Output capacitance C V = 0 V V = -25 V, f = 1 MHz -64 90 pF oss GS DS Reverse transfer capacitance C -35 50 rss c Total gate charge Q - 10.2 15.5 g c Gate-source charge Q V = -10 V V = -30 V, I = -6.5 A -2.2 - nC gs GS DS D c Gate-drain charge Q -2.6 - gd Gate resistance R f = 1 MHz 2.50 5.18 7.80 g c Turn-on delay time t -7 12 d(on) c Rise time t -4 7 r V = -30 V, R = 12 DD L ns c I -2.5 A, V = -10 V, R = 1 Turn-off delay time t D GEN g -17 29 d(off) c Fall time t -4 7 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- -20 A SM Forward voltage V I = -3.5 A, V = 0 V - -0.88 -1.2 V SD F GS Body diode reverse recovery time t -24 48 ns rr Body diode reverse recovery charge Q -28 56 nC rr I = -2 A, di/dt = 100 A/s F Reverse recovery fall time t -21- a ns Reverse recovery rise time t -3 - b Body diode peak reverse recovery current I --3.4 - A RM(REC) Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S21-1147-Rev. A, 06-Dec-2021 Document Number: 63171 2 For technical questions, contact: automos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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