VS-10WQ045FNPbF Vishay Semiconductors Schottky Rectifier, 10 A FEATURES Base cathode Popular D-PAK outline 4, 2 Small foot print, surface mountable Low forward voltage drop High frequency operation 1 3 D-PAK (TO-252AA) Anode Anode Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Package D-PAK (TO-252AA) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C I 10 A F(AV) V 45 V R DESCRIPTION V at I 0.53 V F F The VS-10WQ045FN surface mount Schottky rectifier has I 15 mA at 125 C RM been designed for applications requiring low forward drop T max. 175 C J and small foot prints on PC board. Typical applications are Diode variation Single die in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery E 20 mJ AS protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 10 A F(AV) V 45 V RRM I t = 5 s sine 400 A FSM p V 10 Apk, T = 125 C 0.53 V F J T Range - 40 to 175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-10WQ045FNPbF UNITS Maximum DC reverse voltage V R 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 157 C, rectangular waveform 10 A F(AV) C See fig. 5 Maximum peak one cycle Following any rated 5 s sine or 3 s rect. pulse 400 non-repetitive surge current I load condition and with A FSM 10 ms sine or 6 ms rect. pulse 75 See fig. 7 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 3 A, L = 4.4 mH 20 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 3.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 94122 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 14-Jan-11 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 1 VS-10WQ045FNPbF Schottky Rectifier, 10 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 10 A 0.63 T = 25 C J 20 A 0.80 Maximum forward voltage drop (1) V V FM See fig. 1 10 A 0.53 T = 125 C J 20 A 0.71 T = 25 C 1 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 15 J Threshold voltage V 0.255 V F(TO) T = T maximum J J Forward slope resistance r 22 m t Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 760 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 5.0 nH S Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T - 40 to 175 C J Stg temperature range Maximum thermal resistance, DC operation R 2.0 thJC junction to case See fig. 4 C/W Maximum thermal resistance, R 50 thJA junction to ambient 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) 10WQ045FN Note dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94122 2 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Revision: 14-Jan-11