Product Information

VS-113CNQ100ASLPBF

VS-113CNQ100ASLPBF electronic component of Vishay

Datasheet
Vishay Semiconductors Schottky Diodes & Rectifiers 2X55A 100V Common Cathode

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 400
Multiples : 400
400 : USD 7.3158
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 10.7107
10 : USD 9.6453
25 : USD 8.7873
100 : USD 7.9222
250 : USD 7.349
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
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VS-113CNQ100APbF Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier New Generation 3 D-61 Package, 2 x 55 A FEATURES VS-113CNQ100APbF Base 175 C T operation common J Available cathode Center tap module Available Low forward voltage drop 12 3 High frequency operation Anode Anode Common 1 2 High power discrete cathode D-61-8 High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance VS-113CNQ100ASMPbF Guard ring for enhanced ruggedness and long term reliability New fully transfer-mold low profile, small footprint, high 12 3 current package Anode Anode Common 1 2 cathode Designed and qualified for industrial level Material categorization: for definitions of compliance D-61-8-SM please see www.vishay.com/doc 99912 Base Note VS-113CNQ100ASLPbF common * This datasheet provides information about parts that are cathode RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details. 13 Anode Anode DESCRIPTION 1 2 D-61-8-SL The center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation PRODUCT SUMMARY up to 175 C junction temperature. Typical applications are Package D-61-8, D-61-8-SM, D-61-8-SL in switching power supplies, converters, freewheeling I 2 x 55 A F(AV) diodes, and reverse battery protection. V 100 V R V at I 0.81 V F F I max. 32 mA at 125 C RM T max. 175 C J Diode variation Common cathode E 15 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 110 A F(AV) V 100 V RRM I t = 5 s sine 7000 A FSM p V 55 A , T = 125 C (per leg) 0.66 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-113CNQ100APbF UNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM Revision: 23-May-14 Document Number: 94125 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-113CNQ100APbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 55 forward current I 50 % duty cycle at T = 150 C, rectangular waveform A F(AV) C per device 110 See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated 7000 non-repetitive surge current per leg I load condition and with A FSM 10 ms sine or 6 ms rect. pulse 720 See fig. 7 rated V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 30 mH 15 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 55 A 0.81 T = 25 C J 110 A 1.00 Maximum forward voltage drop per leg (1) V V FM See fig. 1 55 A 0.66 T = 125 C J 110 A 0.79 T = 25 C 1.0 J Maximum reverse leakage current per leg (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 32 J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 1960 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage , T -55 to +175 C T J Stg temperature range Maximum thermal resistance, DC operation 0.5 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 0.25 C/W junction to case per package Typical thermal resistance, Mounting surface, smooth and greased R 0.30 thCS case to heatsink (D-61-8 only) Device flatness < 5 mils 7.8 g Approximate weight 0.28 oz. minimum 12 (10) kgf cm Mounting torque Recommended hardware 3M stainless screw (D-61-8 only) (lbf in) maximum 24 (20) Case style D-61-8 113CNQ100A Marking device Case style D-61-8-SM 113CNQ100ASM Case style D-61-8-SL 113CNQ100ASL Revision: 23-May-14 Document Number: 94125 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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