X-On Electronics has gained recognition as a prominent supplier of W9425G6JB-5I DRAM across the USA, India, Europe, Australia, and various other global locations. W9425G6JB-5I DRAM are a product manufactured by Winbond. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

W9425G6JB-5I Winbond

W9425G6JB-5I electronic component of Winbond
W9425G6JB-5I Winbond
W9425G6JB-5I DRAM
W9425G6JB-5I  Semiconductors

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See Product Specifications
Part No. W9425G6JB-5I
Manufacturer: Winbond
Category: DRAM
Description: DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.5V 60-Pin TFBGA
Datasheet: W9425G6JB-5I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 209
Multiples : 1
209 : USD 5.8754
250 : USD 5.8174
500 : USD 5.7582
1000 : USD 5.7015
2000 : USD 5.6435
2500 : USD 5.5881
3000 : USD 5.5314
4000 : USD 5.476
5000 : USD 5.4218
10000 : USD 5.3676
N/A

Obsolete
0
MOQ : 209
Multiples : 209
209 : USD 4.572
2508 : USD 4.488
5016 : USD 4.392
10032 : USD 4.356
N/A

Obsolete
0
MOQ : 8
Multiples : 1
8 : USD 7.5355
10 : USD 6.736
25 : USD 6.0412
N/A

Obsolete
   
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We are delighted to provide the W9425G6JB-5I from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W9425G6JB-5I and other electronic components in the DRAM category and beyond.

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W9425G6JB 4 M 4 BANKS 16 BITS DDR SDRAM Table of Contents- 1. GENERAL DESCRIPTION ............................................................................................................. 4 2. FEATURES .................................................................................................................................... 4 3. ORDER INFORMATION ................................................................................................................ 4 4. KEY PARAMETERS ...................................................................................................................... 5 5. BALL CONFIGURATION ............................................................................................................... 6 6. BALL DESCRIPTION ..................................................................................................................... 7 7. BLOCK DIAGRAM ......................................................................................................................... 8 8. FUNCTIONAL DESCRIPTION ....................................................................................................... 9 8.1 Power Up Sequence ............................................................................................................ 9 8.2 Command Function ........................................................................................................... 10 8.2.1 Bank Activate Command ........................................................................................ 10 8.2.2 Bank Precharge Command .................................................................................... 10 8.2.3 Precharge All Command ........................................................................................ 10 8.2.4 Write Command ...................................................................................................... 10 8.2.5 Write with Auto-precharge Command .................................................................... 10 8.2.6 Read Command ...................................................................................................... 10 8.2.7 Read with Auto-precharge Command .................................................................... 10 8.2.8 Mode Register Set Command ................................................................................ 11 8.2.9 Extended Mode Register Set Command ................................................................ 11 8.2.10 No-Operation Command ........................................................................................ 11 8.2.11 Burst Read Stop Command .................................................................................... 11 8.2.12 Device Deselect Command .................................................................................... 11 8.2.13 Auto Refresh Command ......................................................................................... 11 8.2.14 Self Refresh Entry Command ................................................................................. 12 8.2.15 Self Refresh Exit Command ................................................................................... 12 8.2.16 Data Write Enable /Disable Command ................................................................... 12 8.3 Read Operation ................................................................................................................. 12 8.4 Write Operation ................................................................................................................. 13 8.5 Precharge .......................................................................................................................... 13 8.6 Burst Termination .............................................................................................................. 13 8.7 Refresh Operation ............................................................................................................. 13 8.8 Power Down Mode ............................................................................................................ 14 8.9 Input Clock Frequency Change during Precharge Power Down Mode ............................ 14 Publication Release Date: Oct. 04, 2012 - 1 - Revision A03 W9425G6JB 8.10 Mode Register Operation .................................................................................................. 14 8.10.1 Burst Length field (A2 to A0) .................................................................................. 14 8.10.2 Addressing Mode Select (A3) ................................................................................. 15 8.10.3 CAS Latency field (A6 to A4) .................................................................................. 16 8.10.4 DLL Reset bit (A8) .................................................................................................. 16 8.10.5 Mode Register /Extended Mode register change bits (BA0, BA1) ......................... 16 8.10.6 Extended Mode Register field ................................................................................ 16 8.10.7 Reserved field ......................................................................................................... 16 9. OPERATION MODE .................................................................................................................... 17 9.1 Simplified Truth Table ........................................................................................................ 17 9.2 Function Truth Table ......................................................................................................... 18 9.3 Function Truth Table for CKE ............................................................................................ 21 9.4 Simplified Stated Diagram ................................................................................................. 22 10. ELECTRICAL CHARACTERISTICS ............................................................................................ 23 10.1 Absolute Maximum Ratings ............................................................................................... 23 10.2 Recommended DC Operating Conditions ......................................................................... 23 10.3 Capacitance ....................................................................................................................... 24 10.4 Leakage and Output Buffer Characteristics ...................................................................... 24 10.5 DC Characteristics ............................................................................................................. 25 10.6 AC Characteristics and Operating Condition ..................................................................... 26 10.7 AC Test Conditions ............................................................................................................ 27 11. SYSTEM CHARACTERISTICS FOR DDR SDRAM .................................................................... 29 11.1 Table 1: Input Slew Rate for DQ, DQS, and DM ............................................................... 29 11.2 Table 2: Input Setup & Hold Time Derating for Slew Rate ................................................ 29 11.3 Table 3: Input/Output Setup & Hold Time Derating for Slew Rate .................................... 29 11.4 Table 4: Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate .................... 29 11.5 Table 5: Output Slew Rate Characteristics (X16 Devices only) ........................................ 29 11.6 System Notes: ................................................................................................................... 30 12. TIMING WAVEFORMS ................................................................................................................ 32 12.1 Command Input Timing ..................................................................................................... 32 12.2 Timing of the CLK Signals ................................................................................................. 32 12.3 Read Timing (Burst Length = 4) ........................................................................................ 33 12.4 Write Timing (Burst Length = 4) ........................................................................................ 34 12.5 DM, DATA MASK (W9425G6JB) ...................................................................................... 35 12.6 Mode Register Set (MRS) Timing ..................................................................................... 36 12.7 Extend Mode Register Set (EMRS) Timing ....................................................................... 37 12.8 Auto-precharge Timing (Read Cycle, CL = 2) ................................................................... 38 Publication Release Date: Oct. 04, 2012 - 2 - Revision A03

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA
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