Product Information

WST2N7002

WST2N7002 electronic component of Winsok

Datasheet
MOSFET N Trench 60V 700mA 3V @ 250uA 450 mΩ @ 500mA,10V SOT-23 (SOT-23-3) RoHS

Manufacturer: Winsok
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.051 ea
Line Total: USD 0.51

17945 - Global Stock
Ships to you between
Tue. 04 Jun to Fri. 07 Jun
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
5723 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 20
Multiples : 20

Stock Image

WST2N7002
Winsok

20 : USD 0.0436
200 : USD 0.037
600 : USD 0.0332
3000 : USD 0.0218
9000 : USD 0.02
21000 : USD 0.0189

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

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The WST2N7002 is a three-terminal MOSFET N Trench 60V 700mA 3V @ 250uA 450mΩ @ 500mA, 10V SOT-23 RoHS (SOT-23-3) manufactured by Winsok. It is designed for applications requiring fast switching at high voltage. It has a high breakdown voltage of 60V and low on-resistance of 450mΩ @ 500mA. Its gate-source threshold voltage is low at 10V, ensuring efficient switching of pulses and signals. It also has low leakage current of up to 250uA at 3V. This MOSFET is packaged in an SOT-23-3 RoHS compliant package, which has excellent thermal characteristics for compact applications. This makes the WST2N7002 MOSFET an ideal choice for use in a variety of switching and power conversion applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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