Product Information

CMPA5259025F

CMPA5259025F electronic component of Wolfspeed

Datasheet
RF Amplifier GaN MMIC Power Amp 28V 5.2-5.9GHz 25W

Manufacturer: Wolfspeed
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 619.875 ea
Line Total: USD 619.88

27 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
27 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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CMPA5259025F
Wolfspeed

1 : USD 639.065
10 : USD 597.1576

     
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RoHS - XON
Icon ROHS
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Operating Frequency
Gain
Operating Supply Voltage
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Maximum Operating Temperature
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PN: CMPA5259025F Package Type: 440219 CMPA5259025F 25 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers Crees CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. Typical Performance Over 5.2-5.9 GHz (T = 25C) of Demonstration Amplifier C Parameter 5.2 GHz 5.5 GHz 5.9 GHz Units Small Signal Gain 33.6 31.9 32.2 dB Output Power 38.5 39.6 34.8 W Efficiency 53.5 51.3 47.2 % Input Return Loss -13.5 -15.5 -4.8 dB Note: 100 sec Pulse Width, 10% Duty Cycle, P = 22 dBm IN Features Applications Radar 30 dB Small Signal Gain 50% Efficiency at P SAT Operation up to 28 V High Breakdown Voltage Subject to change without notice. 1 www.cree.com/rf Rev 0.1 January 2019Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 V 25C DSS DC Gate-source Voltage V -10, +2 V 25C GS DC Storage Temperature T -55, +150 C STG Operating Junction Temperature T 225 C J Soldering Temperature T 245 C S Screw Torque 60 in-oz G Forward Gate Current I 8 mA 25C 1 Thermal Resistance, Junction to Case R 1.66 C/W 100 usec, 10%, 85C JC Case Operating Temperature T -40, +105 C C Notes: 1 Measured for the CMPA5259025F at P = 35 W. DISS Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Cree, Inc. Copyright 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the 4600 Silicon Drive Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Fax: +1.919.869.2733 www.cree.com/rf 2 CMPA5259025F Rev 0.1

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Wolfspeed
Wolfspeed / Cree
Wolfspeed(CREE)

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