Product Information

CMPA5259050F

CMPA5259050F electronic component of Wolfspeed

Datasheet
RF Amplifier GaN MMIC Power Amp 28V 5.2-5.9GHz 50W

Manufacturer: Wolfspeed
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 696.7412 ea
Line Total: USD 696.74

48 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
44 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

CMPA5259050F
Wolfspeed

1 : USD 806.4813
10 : USD 794.1298
100 : USD 753.5867
200 : USD 753.5511
500 : USD 753.5156
1000 : USD 753.3969
2000 : USD 753.385

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
Gain
Operating Supply Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Packaging
Test Frequency
Brand
Number Of Channels
Development Kit
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
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PN: CMPA5259050F Package Type: 440219 CMPA5259050F 50 W, 5200 - 5900 MHz, 28 V, GaN MMIC for Radar Power Amplifiers Crees CMPA5259050F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259050F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a 0.5 inch square ceramic/metal flange package. Typical Performance Over 5.2-5.9 GHz (T = 25C) of Demonstration Amplifier C Parameter 5.2 GHz 5.5 GHz 5.9 GHz Units Small Signal Gain 31.4 30.8 31.0 dB Output Power 59.6 56.0 55.2 W Efficiency 51.5 50.1 51.4 % Input Return Loss -12.5 -12.0 -7.0 dB Note: 100 sec Pulse Width, 10% Duty Cycle, P = 26 dBm IN Features Applications AESA Radar 30 dB Small Signal Gain Defense Radar 50% Efficiency at P SAT Fire Control Radar Operation up to 28 V Naval, Marine, Ground Protection High Breakdown Voltage Radar 0.5 inch-square package Weather Radar Subject to change without notice. 1 www.cree.com/rf Rev 0.0 January 2019Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 V V DSS DC DC Gate-source Voltage V -10, +2 V V GS DC DC Storage Temperature T -55, +150 C C STG Operating Junction Temperature T 225 C C J Soldering Temperature T 245 C C S Screw Torque 60 in-oz in-oz 1 Thermal Resistance, Junction to Case R 1.60 C/W P = 61 W, T = 85C, 500 s, 20% JC DISS CASE Case Operating Temperature T -40, +105 C C Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Cree, Inc. Copyright 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the 4600 Silicon Drive Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 owners and do not imply specific product and/or vendor endorsement, sponsorship or association. Fax: +1.919.869.2733 www.cree.com/rf 2 CMPA5259050F Rev 0.0

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Wolfspeed
Wolfspeed / Cree
Wolfspeed(CREE)

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