Product Information

SI2306A

SI2306A electronic component of Youtai

Datasheet
MOSFET N Trench 30V 3.5A 3V @ 250uA 57 mΩ @ 3.5A,10V SOT-23 RoHS

Manufacturer: Youtai
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0595 ea
Line Total: USD 0.6

8794 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
13075 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 20
Multiples : 20

Stock Image

SI2306A
Youtai

20 : USD 0.0473
200 : USD 0.0366
600 : USD 0.0306
3000 : USD 0.0259
9000 : USD 0.0228
21000 : USD 0.0212

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The SI2306A is an enhancement mode (normally-off) metal oxide field effect transistor (MOSFET) from Youtai. It has an N-Trench structure, which allows for improved switching speed and low-on resistance. This MOSFET is qualified to RoHS standards and is rated for a continuous drain current of 3.5A, a drain source breakdown voltage of 30V, and a gate-source threshold voltage of 3V at 250uA. It also has a low on-resistance of 57 mΩ at 3.5A and 10V. The package is a compact SOT-23, ideal for applications with limited PCB space.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
UMW(Youtai Semiconductor Co., Ltd.)
Youtai Semiconductor Co., Ltd.

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