About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW40M120DF3


STMicroelectronics IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 780
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USD 6.3537
Multiples of: 1

Single1200 V1.85 V20 V80 A250 nA  TO - 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 C900 - 1300V Igbts
STGP14NC60KD


Transistor: IGBT; 600V; 14A; 80W; TO220AB
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STMicroelectronics Availability : 38
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USD 1.0391
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      80 W         
STGF3NC120HD


STMicroelectronics IGBT Transistors N-Ch 1200 Volt 3 Amp
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STMicroelectronics Availability : 38
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USD 1.0583
Multiples of: 40

Single1200 V2.8 V+/- 20 V6 A+/- 100 nA  TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C+ 150 C900 - 1300V Igbts
STGFW20V60DF


IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
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STMicroelectronics Availability : 37
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USD 1.3645
Multiples of: 1

Single600 V1.8 V+/- 20 V40 A250 nA  TO - 3PFTubeSiThrough Hole52 W- 55 C+ 175 C600 - 650V Igbts
STGW30NC60KD


Transistor: IGBT; 600V; 28A; 200W; TO247-3
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STMicroelectronics Availability : 31
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USD 2.2275
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      200 W         
STGWA75H65DFB2


IGBT Transistors Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT
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STMicroelectronics Availability : 27
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USD 6.1138
Multiples of: 1

                
STGF10NC60KD


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics Availability : 24
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USD 0.9049
Multiples of: 1

Single600 V2 V+/- 20 V 100 nA25 W TO - 220 - 3 FPTubeSiThrough Hole25 W- 55 C+ 150 CStgf10nc60kd
STGW40H65FB


IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT
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STMicroelectronics Availability : 23
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USD 2.2283
Multiples of: 1

Single650 V1.6 V20 V80 A250 nA283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40h65fb
STGYA50H120DF2


IGBT Transistors Trench gate field-stop 1200 V 50 A high-speed H series IGBT
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STMicroelectronics Availability : 13
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USD 6.9997
Multiples of: 1

      535 W         
STGYA75H120DF2


IGBT Transistors Trench gate field-stop 1200 V, 75 A, high-speed H series IGBT
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STMicroelectronics Availability : 0
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USD 13.3249
Multiples of: 1

                
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