About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGP3NC120HD


STMicroelectronics IGBT Transistors 7A 1200 V Very Fast IGBT Power Bipolar
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 8459
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USD 1.3569
Multiples of: 1

Single 2.2 V20 V14 A100 nA  TO - 220 - 3TubeSiThrough Hole75 W- 55 C+ 150 C900 - 1300V Igbts
STGWA50IH65DF


IGBT Transistors Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series
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STMicroelectronics Availability : 388
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USD 2.6546
Multiples of: 1

Single650 V1.5 V20 V100 A250 nA  TO - 247 - 3 SiThrough Hole300 W  Stgwa50ih65df
STGF10M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss
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STMicroelectronics Availability : 339
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USD 0.5901
Multiples of: 1

Single650 V1.8 V+/- 20 V20 A+/- 250 uA  TO - 220FP - 3  Through Hole30 W- 55 C+ 175 CStgf10m65df2
STGP20V60F


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics Availability : 339
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USD 0.91
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Single600 V2.2 V20 V40 A250 nA  TO - 220 - 3TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
STGB10NC60HDT4


IGBT Transistors N Ch 10A 600V
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STMicroelectronics Availability : 336
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USD 0.9513
Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb10nc60hd
STGW30M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
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STMicroelectronics Availability : 329
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USD 2.0986
Multiples of: 1

Single650 V1.55 V+/- 20 V60 A+/- 250 nA  TO - 247 - 3 SiThrough Hole258 W- 55 C+ 175 CStgw30m65df2
STGWT60H65FB


IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT
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STMicroelectronics Availability : 261
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USD 1.9942
Multiples of: 1

Single650 V1.6 V+/- 20 V80 A250 nA375 W TO - 3PTubeSiThrough Hole375 W- 40 C+ 175 CStgwt60h65fb
STGP10M65DF2


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 255
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USD 0.5359
Multiples of: 1

         TubeSi    600 - 650V Igbts
STGW60H65DRF


IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
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STMicroelectronics Availability : 187
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USD 2.4625
Multiples of: 1

 650 V1.9 V20 V120 A250 nA360 W TO - 247TubeSiSmd/Smt360 W  Stgw60h65drf
STGF15M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
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STMicroelectronics Availability : 145
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USD 0.806
Multiples of: 1

Single650 V1.55 V+/- 20 V30 A+/- 250 uA  TO - 220FP - 3 SiThrough Hole31 W- 55 C+ 175 CStgf15m65df2
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