About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGP8NC60KD


IGBT Transistors N Ch 500V 0.21 15A Pwr MOSFET
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STMicroelectronics Availability : 978
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USD 0.7418
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Single600 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CStgp8nc60kd
STGWT60H65DFB


STMicroelectronics IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT
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STMicroelectronics Availability : 253
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USD 3.25
Multiples of: 1

Single650 V1.6 V+/- 20 V80 A250 nA375 W TO - 3PTubeSiThrough Hole375 W- 55 C+ 175 CStgwt60h65dfb
STGWA30H65DFB


IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package
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STMicroelectronics Availability : 22
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USD 3.4202
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Single650 V1.55 V20 V60 A250 nA  TO - 247 - 3 SiThrough Hole260 W- 55 C+ 175 CStgwa30h65dfb
STGP19NC60HD


IGBT Transistors 19 A - 600 V very fast IGBT
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STMicroelectronics Availability : 19
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USD 1.1345
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Single600 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CStgp19nc60hd
STGW15S120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 19
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USD 4.8917
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Single1.2 kV1.55 V+/- 20 V30 A250 nA  TO 247 - 3TubeSiThrough Hole259 W- 55 C+ 175 C900 - 1300V Igbts
STGWA15M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 16
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USD 2.112
Multiples of: 1

Single1200 V1.85 V20 V30 A250 nA  TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 C900 - 1300V Igbts
STGW60V60DF


IGBT Transistors 600V 60A High Speed Trench Gate IGBT
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STMicroelectronics Availability : 13
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USD 3.3783
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      375 W         
STGW25H120F2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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STMicroelectronics Availability : 12
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USD 6.5426
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Single1200 V2.1 V20 V50 A250 nA375 W TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 CStgw25h120f2
STGF19NC60KD


igbts 600v 16a to-220f (to-220is) rohs
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STMicroelectronics Availability : 9
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USD 1.5068
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STGW20IH125DF


STMicroelectronics IGBT Transistors 1250V 20A trench gate field-stop IGBT
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STMicroelectronics Availability : 9
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USD 2.2476
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Single1.25 kV2.55 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole259 W- 55 C+ 175 C900 - 1300V Igbts
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