About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGF15H60DF


IGBT Transistors Trench gate H series 600V 15A HiSpd
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STMicroelectronics Availability : 650
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USD 1.04

Multiples of: 1

Single600 V1.6 V+/- 20 V30 A250 nA30 W TO - 220 - 3 FPTubeSiThrough Hole30 W- 55 C+ 175 CStgf15h60df
STGW25H120DF2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 58
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USD 3.9917

Multiples of: 1

Single1200 V2.1 V20 V50 A250 nA375 W TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 CStgw25h120df2
STGW40V60DLF


STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 58
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USD 5.5282

Multiples of: 1

Single600 V2.35 V20 V80 A250 nA  TO - 247TubeSiThrough Hole283 W- 55 C+ 175 C600 - 650V Igbts
STGW50H60DF


STMicroelectronics IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
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STMicroelectronics Availability : 54
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USD 1.9625

Multiples of: 1

  1.8 V+/- 20 V100 A250 nA360 W TO - 247TubeSiThrough Hole360 W- 55 C+ 150 CStgw50h60df
STGWA40H120DF2


IGBT Transistors IGBT & Power Bipolar
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STMicroelectronics Availability : 50
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USD 3.275

Multiples of: 1

Single1.2 kV2.5 V20 V80 A250 nA  TO - 247 - 3  Through Hole468 W- 55 C+ 175 C900 - 1300V Igbts
STGF6M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 6 A low loss
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STMicroelectronics Availability : 48
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USD 0.7424

Multiples of: 50

Single650 V1.55 V+/- 20 V12 A+/- 250 uA  TO - 220FP - 3  Through Hole24.2 W- 55 C+ 175 C 
STGP10H60DF


IGBT Transistors Trench gate H series 600V 10A HiSpd
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STMicroelectronics Availability : 48
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USD 1.6674

Multiples of: 1

Single600 V1.5 V+/- 20 V20 A250 nA115 W TO - 220 - 3TubeSiThrough Hole115 W- 55 C+ 175 CStgp10h60df
STGP4M65DF2


IGBT Transistors Trench Gate IGBT M Series 650V 4A
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STMicroelectronics Availability : 48
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USD 1.6725

Multiples of: 1

Single650 V1.6 V+/- 20 V8 A250 uA  TO - 220 - 3Tube Through Hole68 W- 55 C+ 175 CStgp4m65df2
STGWT40V60DF


STMicroelectronics IGBT Transistors 600V 40A High Speed Trench Gate IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 40
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USD 1.6625

Multiples of: 1

Single600 V2.35 V20 V80 A250 nA  TO - 3PTubeSiThrough Hole283 W- 55 C+ 175 C600 - 650V Igbts
STGW20V60DF


STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT
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STMicroelectronics Availability : 32
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USD 2.132

Multiples of: 1

Single600 V2.3 V20 V40 A250 nA  TO - 247Tube Through Hole167 W- 55 C+ 175 C600 - 650V Igbts
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