About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKD08N65ET6ARMA1


IGBT Trench Field Stop 650V 15A 47W Surface Mount PG-TO252-3
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Infineon 5820
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USD 1.1259
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        TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63Digi - Reel®     Trenchstop
IKW30N65EL5XKSA1


Transistor: IGBT; 650V; 62A; 114W; TO247-3
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Infineon 2988
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USD 2.553
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      114 W   Trenchstop 5     
EG3112


MOS Drivers SOIC-8_150mil RoHS
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EG 2923
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USD 0.3227
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STGWA60H65DFB


STMicroelectronics IGBT Transistors
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STMicroelectronics 2910
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USD 2.575
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Single650 V2 V+/- 20 V80 A250 nA  TO - 247 - 3 SiThrough Hole375 W- 55 C+ 175 C600 - 650V Igbts
STGB10NC60KDT4


IGBT Transistors N-channel MOSFET
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STMicroelectronics 2906
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USD 0.6182
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Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb10nc60kd
STGWA25M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 2886
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USD 3.0893
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Single1.2 kV1.85 V20 V50 A250 nA  TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C900 - 1300V Igbts
BIDW50N65T


IGBT Transistors IGBT Discrete 650V, 50A in TO-247
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Bourns 2812
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USD 4.0344
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Single650 V1.65 V- 20 V , + 20 V100 A   TO - 247 - 3TubeSiThrough Hole416 W- 55 C+ 150 CBID
RJH65T14DPQ-A0#T0


IGBT Transistors IGBT for IH 650V 50A TO247
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Renesas 2811
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USD 1.3178
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IGW75N65H5XKSA1


IGBT Transistors Infineon s new TRENCHSTOP 5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market s high e
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Infineon 2735
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USD 3.4404
Multiples of: 30

Single650 V1.65 V20 V120 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 H5
IKW40N65F5FKSA1


Transistor: IGBT; 650V; 74A; 250W; TO247-3; Series: F5
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Infineon 239
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USD 2.4035
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      250 W   Trenchstop 5    F5
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