About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGD15N65T6ARMA1


IGBT Trench Field Stop 650V 30A 100W Surface Mount PG-TO252-3
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Infineon 2620
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USD 1.1385
Multiples of: 1

        TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63Digi - Reel®     Trenchstop
IKP15N60TXKSA1


Transistor: IGBT; 600V; 15A; 130W; TO220-3
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Infineon 2540
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USD 1.1549
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      130 W   Trenchstop     
IKD10N60RC2ATMA1


IGBT Trench Field Stop 600V 18.8A 79W Surface Mount PG-TO252-3
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Infineon 2484
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USD 0.5405
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Single600 V2.4 V20 V18.8 A   PG - TO252 - 3Reel , Cut Tape SMD/SMT79 W- 40 C+ 175 CTrenchstop RC
TIG058E8-TL-H


ON Semiconductor IGBT Transistors LIGHT-CONTROLLING FLASH
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ON Semiconductor 2457
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USD 0.2831
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         ReelSi    Tig058e8
BIDNW30N60H3


IGBT Transistors IGBT Discrete 600V, 30A in TO-247N
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Bourns 2440
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USD 2.8229
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Single600 V1.65 V- 20 V , + 20 V60 A   TO - 247N - 3TubeSiThrough Hole230 W- 55 C+ 150 CBID
IKD04N60RATMA1


IGBT Transistors IGBT w/ INTG DIODE 600V 8A
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Infineon 2425
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USD 0.6513
Multiples of: 1

Single600 V1.65 V+/- 20 V8 A100 nA  TO - 252 - 3Cut TapeSiSmd/Smt75 W- 40 C+ 175 CRc
FGD3040G2_F085


IGBT Transistors EcoSPARK2 300mJ 400V N-Chan Ignition IGBT
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ON Semiconductor 2425
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USD 1.1786
Multiples of: 2500

 400 V1.15 V10 V23.2 A 150 W TO - 252ReelSiSmd/Smt150 W- 40 C+ 125 CFgd3040g2
IXSH20N60B2D1


IGBT Transistors 20 Amps 600V 2.5 Rds
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IXYS 2420
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USD 4.7497
Multiples of: 1

Single600 V2.5 V+/- 20 V +/- 100 nA190 W TO - 247 - 3Tube Through Hole - 55 C+ 150 CIxsh20n60
AOD5B65N1


Transistor: IGBT; 650V; 5A; 21W; TO252; Eoff: 0.049mJ; Eon: 0.081mJ
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Alpha & Omega 2414
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USD 0.5564
Multiples of: 1

  2.5 V   21 W         
IKW40N120H3FKSA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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Infineon 74
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USD 5.4181
Multiples of: 1

Single1200 V2.7 V20 V80 A600 nA  TO - 247 - 3TubeSiThrough Hole483 W- 40 C+ 175 CXkw40n120
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