About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
CJ2301 S1


MOSFET P Trench 20V 2.3A 1V @ 250uA 112 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology Availability : 435049
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USD 0.0215

Multiples of: 20

                   
2N7002ET7G


MOSFET NFET SOT23 60V 115MA 7MO
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ON Semiconductor Availability : 430811
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USD 0.0209

Multiples of: 1

310 mA60 V2.5 OhmsN - Channel 1 V- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V0.81 nCEnhancement  
BSR316PH6327XTSA1


Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
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Infineon Availability : 410310
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USD 0.1271

Multiples of: 3000

            Sipmos      
BSS84LT1G


MOSFET 50V 130mA P-Channel
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ON Semiconductor Availability : 392927
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USD 0.0229

Multiples of: 10

130 mA50 V10 OhmsP - Channel  - 55 C+ 150 C225 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel5 V2.2 nCEnhancement  
2N7002 TR


MOSFET N-Ch 60V .2A
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Central Semiconductor Availability : 386609
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USD 0.1042

Multiples of: 1

115 mA60 V3.7 OhmsN - Channel 1 V- 65 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel40 V592 pCEnhancement  
FCH041N65F_F085


Fairchild Semiconductor MOSFET 650V N-Channel SuperFET II MOSFET
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ON Semiconductor Availability : 377136
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USD 10.3756

Multiples of: 450

76 A650 V96 mOhmsn - channel 3 V- 55 C+ 150 C595 Wthrough holeTO - 247 - 3Tubesi1 channel+/- 20 V234 nCenhancement superfet ii
SQ2315ES-T1_BE3


MOSFET P-CHANNEL 12V D-S
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Vishay Availability : 376974
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USD 0.1898

Multiples of: 1

           Cut Tape       
IPB65R150CFDATMA1


Transistor: N-MOSFET; unipolar; 650V; 22.4A; 195.3W; PG-TO263-3
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Infineon Availability : 370540
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USD 2.7656

Multiples of: 1

            Coolmos      
LBSS138LT1G


MOSFET N Trench 50V 200mA 1.5V @ 1mA 3.5 Ω @ 200mA,5V SOT-23 (SOT-23-3) RoHS
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Leshan Availability : 363459
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USD 0.0111

Multiples of: 50

                   
SUD50P06-15L-E3


MOSFET P-CH 60V 50A
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Vishay Availability : 360840
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USD 1.0937

Multiples of: 2000

           -Si     Trenchfet
2N7002DWH6327XTSA1


Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT-363
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Infineon Availability : 357930
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USD 0.038

Multiples of: 3000

            Optimos      
L2N7002LT1G


MOSFET N Trench 60V 2V @ 250uA 7.5 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Leshan Availability : 356475
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USD 0.0085

Multiples of: 50

                   
SI2302CDS-T1-E3


MOSFET 20V 2.9A 0.86W 57mohm @ 4.5V
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Vishay Availability : 355044
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USD 0.1397

Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtSOT - 23 - 3Reel       
DMC3071LVT-7


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated Availability : 353946
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USD 0.0924

Multiples of: 1

4.6 A , 3.3 A30 V50 mOhms , 95 mOhmsN - Channel, P - Channel 1 v , 2.5 V- 55 C+ 150 C1.1 WSmd/SmtTSOT - 26 - 6Cut TapeSi2 Channel20 V4.5 nC , 6.5 nCEnhancement  
NTMS4920NR2G


Trans MOSFET N-CH 30V 17A 8-Pin SOIC N T/R
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ON Semiconductor Availability : 353273
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USD 0.4922

Multiples of: 1

14.1 A30 V3.6 mOhmsn - channel 1.5 V- 55 C+ 150 C1.46 Wsmd/smtSO - 8Reelsi1 channel20 V58.9 nC   
CPH5617-TL-E


ON Semiconductor MOSFET NCHNCH 2.5V DRIVE SERIES
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ON Semiconductor Availability : 349200
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USD 0.0895

Multiples of: 1

150 mA30 V3.7 Ohmsn - channel    250 mWsmd/smtSOT - 25 - 5Reelsi      
CJ3401


MOSFET P Trench 30V 4.2A 1.3V @ 250uA 65 mΩ @ 4.2A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology Availability : 347788
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USD 0.022

Multiples of: 10

                   
BSS83PH6327XTSA1


Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
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Infineon Availability : 69840
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USD 0.056

Multiples of: 3000

            Sipmos      
SI2302-TP


N-Channel 20 V 3A (Ta) 1.25W (Ta) Surface Mount SOT-23
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Micro Commercial Components (MCC) Availability : 8303
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USD 0.1056

Multiples of: 1

3 A20 V110 mOhmsN - Channel   + 150 C1.25 WSmd/SmtSOT - 23ReelSi1 Channel     
NVTR01P02LT1G


ON Semiconductor MOSFET PFET 20V 0.160R TR
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ON Semiconductor Availability : 53
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USD 0.0854

Multiples of: 1

- 1.3 A- 20 V220 mOhmsP - Channel     Smd/SmtSOT - 23 - 3ReelSi    Aec - Q101 
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