About MOSFETs

MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFETs

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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NDS351AN


Transistor: N-MOSFET; unipolar; 30V; 1.4A; 0.5W; SOT23
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ON Semiconductor Availability : 345320
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USD 0.1301

Multiples of: 1

   N Channel               
2N7002E-T1-E3


60V 240mA 3O@10V,250mA 350mW N Channel SOT-23 MOSFETs ROHS
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Vishay Availability : 342695
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USD 0.0814

Multiples of: 1

240 mA60 V3 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel4.5 V0.6 nCEnhancement  
SI2302-HXY


20V 2.8A 55mΩ@4.5V,2.8A 0.9W N Channel SOT-23 MOSFETs ROHS
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HXY MOS Availability : 339357
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USD 0.0071

Multiples of: 50

                   
CJ3407


MOSFET P Trench 30V 4.1A 3V @ 250uA 60 mΩ @ 4.1A,10V SOT-23 (SOT-23-3) RoHS
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Changjing Electronics Technology Availability : 336602
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USD 0.0292

Multiples of: 10

                   
SI2312BDS-T1-BE3


MOSFET N-CHANNEL 20-V (D-S)
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Vishay Availability : 335562
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USD 0.2012

Multiples of: 1

3.9 A20 V31 mOhmsN - Channel 850 mV- 55 C+ 150 C750 mWSMD/SMTSOT - 23 - 3Cut Tape , ReelSi1 Channel- 8 V , + 8 V7.5 nCEnhancement  
BSS138AKAR


N-Channel 60 V 200mA (Ta) 300mW (Ta), 1.06W (Tc) Surface Mount TO-236AB
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Nexperia Availability : 335360
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USD 0.033

Multiples of: 1

                   
SI2301


20V 2.2A 700mW 90mΩ@4.5V,1.5A P Channel SOT-23 MOSFETs ROHS
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Yongyutai Electronics Availability : 333486
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USD 0.0072

Multiples of: 50

                   
CMLDM3737 TR


MOSFET 20V Dual N-Ch FET 8.0Vgs 540mA 350mW
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Central Semiconductor Availability : 332400
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USD 0.1612

Multiples of: 1

   N - Channel     Smd/SmtSOT - 563Cut TapeSi2 Channel     
CPH6355-TL-W


MOSFET PCH 4V DRIVE SERIES
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ON Semiconductor Availability : 328830
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USD 0.1378

Multiples of: 1

         smd/smtSOT - 26 - 6Cut Tapesi      
2N7002


60V 115mA 1.2Ω@10V,500mA 200mW 2.1V@250uA 4pF@25V N Channel 20pF@25V +150℃@(Tj) SOT-23 MOSFETs ROHS
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JSMSEMI Availability : 323980
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USD 0.005

Multiples of: 50

                   
BSS169 H6327


Infineon Technologies MOSFET N-Ch 100V 90mA SOT-23-3
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Infineon Availability : 320182
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USD 0.0659

Multiples of: 5

0.17 A100 V6 OhmsN 2.9 V- 55 C+ 150 C0.36 WSurface MountPG - SOT - 23 - 3Tape And ReelSi1 Channel10 V2.1 nCDepletionAec - Q101 
2N7002K-TP


Micro Commercial Components (MCC) MOSFET 350mW, 60V, 340mA
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Micro Commercial Components (MCC) Availability : 320100
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USD 0.0129

Multiples of: 3000

340 mA60 V5.3 OhmsN - Channel 1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V30 nC   
BSS123NH6433XTMA1


N-Channel 100 V 190mA (Ta) 500mW (Ta) Surface Mount PG-SOT23
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Infineon Availability : 320100
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USD 0.0402

Multiples of: 10000

190 mA100 V2.4 OhmsN - Channel 800 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23ReelSi1 Channel20 V900 pCEnhancement  
FDC6420C


SOT-23-6 MOSFETs ROHS
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ON Semiconductor Availability : 314280
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USD 0.2625

Multiples of: 3000

3 A , 2.2 A20 V70 mOhmsN - Channel, P - Channel  - 55 C+ 150 C960 mWSmd/SmtSSOT - 6Cut TapeSi2 Channel12 V Enhancement Powertrench
BSD235NH6327XTSA1


Transistor: N-MOSFET x2; unipolar; 20V; 0.95A; 0.5W; SOT363
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Infineon Availability : 302143
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USD 0.0671

Multiples of: 1

            Optimos 2      
NTR4170NT1G


MOSFET NFET SOT23 30V 4A TR
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ON Semiconductor Availability : 299730
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USD 0.0567

Multiples of: 3000

3.9 A30 V55 mOhmsN - Channel 600 mV- 55 C+ 150 C1.25 WSmd/SmtTO - 236ReelSi1 Channel10 V4.76 nCEnhancement  
2N7002K


60V 300mA 350mW 2.2Ω@10V,300mA 1.6V@250uA 7.8pF@30V N Channel 25.5pF@30V 3.7nC@10V -50℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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MSKSEMI Availability : 299245
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USD 0.006

Multiples of: 50

                   
CJ3400


MOSFET N Trench 30V 5.8A 1.4V @ 250uA 35 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Changjing Electronics Technology Availability : 296703
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USD 0.0183

Multiples of: 20

                   
Hot 2N7002H6327XTSA2


Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 128040
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USD 0.0259

Multiples of: 3000

            Optimos      
PMDXB550UNEZ


NXP Semiconductors MOSFET 30V Dual N-Channel Trench MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Nexperia Availability : 0
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USD 0.0559

Multiples of: 5000

590 mA30 V670 mOhmsN - Channel 450 mV- 55 C+ 150 C4.03 WSmd/SmtDFN1010B - 6ReelSi2 Channel+/- 8 V1.05 nCEnhancement  
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