SMD Schottky Barrier Diode CDBQR54-HF Io = 200 mA VR = 30 Volts RoHS Device 0402/SOD-923F Halogen Free 0.041(1.05) Features 0.037(0.95) -Low forward voltage. 0.026(0.65) -Designed for mounting on small surface. 0.022(0.55) -Extremely thin/leadless package. -Majority carrier conduction. 0.022(0.55) Mechanical data 0.018(0.45) -Case: 0402/SOD-923F standard package, 0.012(0.30) Typ. molded plastic. -Terminals: Gold plated, solderable per MIL-STD-750,method 2026. -Marking Code: Cathode band & BF 0.020(0.50) Typ. -Mounting position: Any Dimensions in inches and (millimeter) -Weight: 0.001 gram(approx.). O Maximum Rating (at TA=25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit Peak reverse voltage VRM 30 V Reverse voltage VR 30 V RMS reverse voltage VR(RMS) 21 V Average forward rectified current IO 200 mA Repetitive peak forward current IFRM 0.3 A 8.3 ms single half sine-wave superimposed Forward current,surge peak IFSM 0.6 A on rate load(JEDEC method) Power dissipation PD 125 mW O Storage temperature TSTG -65 +125 C O Junction temperature Tj +125 C O Electrical Characteristics (at TA=25 C unless otherwise noted) Typ Parameter Conditions Symbol Min Max Unit IF = 0.1mA 0.24 IF = 1mA 0.32 Forward voltage VF V IF = 10mA 0.4 IF = 30mA 0.5 IF = 100mA 1 Reverse current VR = 25V IR 2 uA Capacitance between terminals f = 1 MHz, and 1 VDC reverse voltage CT 10 pF Reverse recovery time IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm Trr 5 nS REV:B QW-G1102 Page 1 Comchip Technology CO., LTD.SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBQR54-HF) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1000 1m O 125 C 100u 100 10u O 75 C 10 1u 1 O 25 C 100n O -25 C 0.1 10n 0 0.2 0.4 0.6 0.8 0 5 10 15 20 25 30 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between Fig.4 - Current derating curve terminals characteristics 14 120 Mounting on glass epoxy PCBs f=1MHz 12 O 100 TA=25 C 10 80 8 60 6 40 4 20 2 0 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 O Reverse voltage (V) Ambient temperature ( C) REV:B QW-G1102 Page 2 Comchip Technology CO., LTD. O 125 C O 25 C O 75 C O -25 C Capacitance between terminals (PF) Forward current (mA ) Average forward current(%) Reverse current ( A )