2DD2652-7 Diodes Incorporated

2DD2652-7 electronic component of Diodes Incorporated
2DD2652-7 Diodes Incorporated
2DD2652-7 Bipolar Transistors - BJT
2DD2652-7  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2DD2652-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2DD2652-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2DD2652-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT LOW VSAT NPN SMT 3K
Datasheet: 2DD2652-7 Datasheet (PDF)
Price (USD)
7723: USD 0.0336 ea
Line Total: USD 259.49 
Availability : 18430
  
Ship by Tue. 19 Aug to Mon. 25 Aug
QtyUnit Price
7723$ 0.0336

Availability 14110
Ship by Fri. 15 Aug to Tue. 19 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.375
10$ 0.2313
100$ 0.1392
500$ 0.0946
1000$ 0.0803
3000$ 0.0649
9000$ 0.0561
24000$ 0.0495


Availability 18430
Ship by Tue. 19 Aug to Mon. 25 Aug
MOQ : 7723
Multiples : 1
QtyUnit Price
7723$ 0.0336


Availability 1697
Ship by Fri. 15 Aug to Tue. 19 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.238
10$ 0.1456
100$ 0.098
288$ 0.0672
791$ 0.063


Availability 974
Ship by Tue. 26 Aug to Fri. 29 Aug
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1642
50$ 0.1314
150$ 0.1152
500$ 0.0694
3000$ 0.0627
6000$ 0.0595


Availability 209520
Ship by Tue. 19 Aug to Mon. 25 Aug
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.052

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2DD2652-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2DD2652-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2DD2652 LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-323 Low Collector-Emitter Saturation Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020D Complementary PNP Type Available (2DB1689) Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Ultra-Small Surface Mount Package Solderable per MIL-STD-202, Method 208 Lead Free By Design/RoHS Compliant (Note 1) Terminal Connections: See Diagram Green Devic (Note 2) Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) C B E Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 15 V CBO Collector-Emitter Voltage 12 V V CEO Emitter-Base Voltage 6 V V EBO Collector Current - Continuous 1.5 A I C Peak Pulse Collector Current I 3 A CM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 300 mW A D 417 Thermal Resistance, Junction to Ambient (Note 3) T = 25C R C/W A JA Power Dissipation (Note 4) T = 25C P 500 mW A D Thermal Resistance, Junction to Ambient (Note 4) T = 25C 250 C/W A R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS Collector-Base Breakdown Voltage V 15 V I = 10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage (Note 5) V 12 V I = 1mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I = 10A, I = 0 (BR)EBO E C Collector Cut-Off Current I 0.1 A V = 15V, I = 0 CBO CB E Emitter Cut-Off Current 0.1 I A V = 6V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage 80 200 mV V I = 500mA, I = 25mA CE(SAT) C B DC Current Gain 270 680 h V = 2V, I = 200mA FE CE C SMALL SIGNAL CHARACTERISTICS V = 10V, I = 0, CB E Output Capacitance C 11 pF obo f = 1MHz V = 2V, I = 100mA, CE C Current Gain-Bandwidth Product 260 MHz f T f = 100MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at 2DD2652 0.6 1.8 1.6 0.5 1.4 I = 5mA B 0.4 1.2 I = 4mA B 1.0 I = 3mA B (Note 4) 0.3 0.8 I = 2mA B 0.2 (Note 3) 0.6 0.4 I = 1mA B 0.1 0.2 0 0 0 25 175 200 0 0.5 1 1.5 2 2.5 3 50 75 100 125 150 V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) CE A Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. Ambient Temperature vs. Collector-Emitter Voltage 1 1,000 T = 150C A I/I = 20 CB T = 85C A T = 25C A 0.1 T = -55C A T = 150C A T = 85C A 100 T = 25C A T = -55C A 0.01 V = 2V CE 0.001 10 0.1 1 10 100 1,000 10,000 0.1 1 10 100 1,000 10,000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 4 Typical Collector-Emitter Saturation Voltage Fig. 3 Typical DC Current Gain vs. Collector Current vs. Collector Current 1.2 1.2 I =/I 20 CB V = 2V CE 1.0 1.0 0.8 0.8 T = -55C A T = -55C A 0.6 0.6 T = 25C A T = 25C A T = 85C A 0.4 0.4 T = 85C A T = 150C A 0.2 0.2 T = 150C A 0 0 0.1 1 10 100 1,000 10,000 1 10 100 1,000 10,000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 5 Typical Base-Emitter Turn-On Voltage Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current vs. Collector Current 2 of 4 December 2008 2DD2652 Diodes Incorporated www.diodes.com Document number: DS31633 Rev. 2 - 2 NEW PRODUCT V , BASE-EMITTER TURN-ON VOLTAGE (V) h, DC CURRENT GAIN BE(ON) FE P , POWER DISSIPATION (W) D V, COLLECTOR-EMITTER CE(SAT) V , BASE-EMITTER SATURATION VOLTAGE (V) BE(SAT) I, COLLECTOR CURRENT (A) SATURATION VOLTAGE (V) C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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