DMC2057UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low On-Resistance D Device BV R DSS DS(ON) T = +25C Low Input Capacitance A 4.0A Fast Switching Speed 42m V = 4.5V GS N-Channel 20V Low Input/Output Leakage 60m V = 2.5V 3.5A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 70m V = -4.5V -3.3A GS P-Channel -20V Halogen and Antimony Free. Green Device (Note 3) 100m V = -2.5V -2.8A GS Mechanical Data Description Case: TSOT26 This new generation MOSFET is designed to minimize the on-state Case Material: Molded Plastic, Green Molding Compound. resistance (R ) and yet maintain superior switching performance, DS(ON) UL Flammability Classification Rating 94V-0 making it ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Applications Terminals: Finish Matte Tin Annealed over Copper Leadframe. e3 Backlighting Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.013 grams (Approximate) Power Management Functions D2 D1 TSOT26 G1 1 6 D1 S2 2 5 S1 G2 G1 G2 3 4 D2 Top View Top View S2 S1 Q2 P-Channel MOSFET Q1 N-Channel MOSFET Ordering Information (Note 4) Part Number Case Packaging DMC2057UVT-7 TSOT26 3000 / Tape & Reel DMC2057UVT-13 TSOT26 10000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMC2057UVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Q1 Value Q2 Value Unit Drain-Source Voltage 20 -20 V V DSS Gate-Source Voltage V 12 8 V GSS Continuous Drain Current (Note 6) Steady T = +25C 4.0 -3.3 A N-Channel: V = 4.5V A GS I D State 3.5 -2.6 T = +70C A P-Channel: V = -4.5V GS Maximum Continuous Body Diode Forward Current (Note 6) 1.2 -1.3 A I S 25 -17 A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) T = +25C P 0.7 W A D Steady State Thermal Resistance, Junction to Ambient (Note 5) 173 C/W R JA Total Power Dissipation (Note 6) 1.1 W T = +25C P A D Steady State Thermal Resistance, Junction to Ambient (Note 6) 108 R JA C/W Thermal Resistance, Junction to Case R 37 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics Q1 N-CHANNEL( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A I V = 20V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.4 1.2 V V V = V , I = 250A GS(TH) DS GS D V = 4.5V, I = 5.0A 32 42 GS D Static Drain-Source On-Resistance R 40 60 m V = 2.5V, I = 4.0A DS(ON) GS D 50 91 V = 1.8V, I = 2.0A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 416 Input Capacitance C iss V = 10V, V = 0V DS GS 44 Output Capacitance C pF oss f = 1.0MHz 35 Reverse Transfer Capacitance C rss Gate Resistance 2.0 R V = 0V, V = 0V, f = 1MHz g DS GS 4.7 Total Gate Charge (V = 4.5V) Q GS g 10.5 Total Gate Charge (V = 10V) Q GS g nC V = 10V, I = 6A DS D 0.4 Gate-Source Charge Q gs 1.2 Gate-Drain Charge Q gd 2.6 Turn-On Delay Time t D(ON) 3.3 Turn-On Rise Time t R V = 10V, V = 4.5V, DS GS ns 12.2 Turn-Off Delay Time t D(OFF) R = 6, I = 6A g D 3.1 Turn-Off Fall Time t F Reverse Recovery Time 8.3 ns t RR I = 6A, di/dt = 100A/s F Reverse Recovery Charge 1.3 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 10 March 2018 DMC2057UVT www.diodes.com Diodes Incorporated Document number: DS40400 Rev. 3 - 2 AADDVVAANNCCEED I INNFFOORRMMAATTIIOONN