DMG1016VQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I max D Device BV R max DSS DS(ON) Low Gate Threshold Voltage V <1V GS(th) T = +25C A Low Input Capacitance 0.4 V = 4.5V 870mA GS Fast Switching Speed Q1 0.5 V = 2.5V 20V GS 780mA Low Input/Output Leakage 0.7 V = 1.8V 640mA GS Complementary Pair MOSFET 0.7 V = -4.5V -640mA Ultra-Small Surface Mount Package GS Q2 ESD Protected Gate to 2.5kV HBM -20V 0.9 V = -2.5V -580mA GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 1.3 V = -1.8V GS -465mA Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance and yet Case: SOT-563 maintain superior switching performance, making it ideal for high Case Material: Molded Plastic, Green Molding Compound efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Switches Terminal Connections: See Diagram Terminal Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (Approximate) SOT-563 D G S 1 2 2 Q Q 2 1 S G D 1 1 2 ESD PROTECTED TO 2.5kV HBM TOP VIEW TOP VIEW BOTTOM VIEW Internal Schematic Ordering Information (Note 5) Part Number Case Packaging DMG1016VQ-7 SOT-563 3,000/Tape & Reel DMG1016VQ-13 SOT-563 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG1016VQ Maximum Ratings (Q1 N-Channel) ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain Source Voltage V 20 V DSS Gate-Source Voltage V 6 V GSS T = +25C 870 A Drain Current (Note 6) I mA D 630 T = +85C A Maximum Ratings (Q2 P-Channel) ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain Source Voltage V -20 V DSS Gate-Source Voltage V 6 V GSS T = +25C -640 A Drain Current (Note 6) I mA D -460 T = +85C A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) P 530 mW D Thermal Resistance, Junction to Ambient (Note 6) R 235 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG 2 of 9 DMG1016VQ September 2015 Diodes Incorporated www.diodes.com Document number: DS37972 Rev. 2 - 2 NEW PRODUCT ADVANCED INFORMATION