DMN1025UFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D MAX Device V R (BR)DSS DS(ON) max Low Input Capacitance T = +25C A Low Profile, 0.6mm Max Height 25m V = 4.5V 6.9A GS ESD protected gate. N-Channel 12V 30m V = 2.5V 6.3A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 38m V = 1.8V 5.5A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(on) Case: U-DFN2020-6 Type B ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Finish NiPdAu over Copper leadframe. Solderable per Load Switch e4 MIL-STD-202, Method 208 Power Management Functions Terminals Connections: See Diagram Below Portable Power Adaptors Weight: 0.0065 grams (approximate) D2 D1 U-DFN2020-6 Type B S2 G2 D2 G2 G1 D1 D1 D2 ESD PROTECTED G1 Gate Protection Gate Protection S1 S2 Diode Diode S1 Pin1 N-CHANNEL MOSFET N-CHANNEL MOSFET Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN1025UFDB-7 U-DFN2020-6 Type B 3000/Tape & Reel DMN1025UFDB-13 U-DFN2020-6 Type B 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN1025UFDB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 12 V V DSS Gate-Source Voltage 10 V V GSS Steady T = +25C 6.9 A I A D State 5.5 T = +70C A Continuous Drain Current (Note 5) V = 4.5V GS T = +25C A 8.8 t < 5s A I D 7.0 T = +70C A Maximum Continuous Body Diode Forward Current (Note 5) 1 A I S Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 35 A DM Avalanche Current (Note 6) L = 0.1mH I 9.8 A AS Avalanche Energy (Note 6) L = 0.1mH E 4.8 mJ AS Thermal Characteristics Characteristic Symbol Value Units Steady State 1.7 Total Power Dissipation (Note 5) P W D t < 5s 2.9 Steady State 71 Thermal Resistance, Junction to Ambient (Note 5) R JA t < 5s 43 C/W Thermal Resistance, Junction to Case (Note 5) R 13 JC Operating and Storage Temperature Range T T -55 to 150 C J, STG Electrical Characteristics N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 12 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 12V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 1 V V = V , I = 250 A GS(th) DS GS D 18 25 V = 4.5V, I = 5.2A GS D Static Drain-Source On-Resistance R 20 30 m V = 2.5V, I = 4.8A DS (ON) GS D 25 38 V = 1.8V, I = 2.5A GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 5.4A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance pF C 917 iss V = 6V, V = 0V, DS GS Output Capacitance pF C 120 oss f = 1.0MHz Reverse Transfer Capacitance pF C 102 rss Gate Resistance 11.4 R V = 0V, V = 0V, f = 1MHz g DS GS 12.6 Total Gate Charge (V = 4.5V) nC GS Q g 23.1 Total Gate Charge (V = 8V) nC GS V = 10V, I = 6.8A DS D 1.3 Gate-Source Charge Q nC gs 1.6 Gate-Drain Charge Q nC gd 3.0 Turn-On Delay Time t ns D(on) 9.3 Turn-On Rise Time t ns r V = 6V, V = 4.5V, DD GS Turn-Off Delay Time 17.2 ns R = 1.1, R = 1 t L G D(off) Turn-Off Fall Time 2.8 ns t f Body Diode Reverse Recovery Time trr 6.8 nS I = 5.4A, dI/dt = 100A/s S Body Diode Reverse Recovery Charge Qrr 1.1 nC I = 5.4A, dI/dt = 100A/s S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. I and E rating are based on low frequency and duty cycles to keep T = +25C AS AS J 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 April 2014 DMN1025UFDB Diodes Incorporated www.diodes.com Document number: DS36668 Rev. 2 - 2