DMN13H750S 130V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage Low Input Capacitance I D V R (BR)DSS DS(ON) Fast Switching Speed T = +25C A Small Surface Mount Package 0.75 V = 10V 1.0A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 130V 0.9A Halogen and Antimony Free. Green Device (Note 3) 0.85 V = 6.0V GS Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the Mechanical Data on-state resistance (R ) and yet maintain superior switching DS(ON) Case: SOT23 performance, making it ideal for high efficiency power management applications. Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Solderable per MIL-STD-202, Method 208 e3 Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 DC-DC Converters Leadframe) Power Management Functions Terminal Connections: See Diagram Battery Operated Systems and Solid-State Relays Weight: 0.009 grams (Approximate) Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D D G G S S Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN13H750S-7 SOT23 3,000/Tape & Reel DMN13H750S-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN13H750S Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 130 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 1.0 A A I D State 0.8 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 1.2 A t<10s I A D 1.0 T = +70C A 3.3 A Pulsed Drain Current (10s Pulse, Duty Cycle 1%) I DM Maximum Body Diode Continuous Current (Note 6) 1.0 A I S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 0.77 Total Power Dissipation W P D (Note 6) 1.26 Steady state 163 Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 115 Steady state 99 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 70 (Note 6) Thermal Resistance, Junction to Case 17.3 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 130 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 100 nA I V = 120V, V = 0V DSS DS GS Gate-Body Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 2.0 2.7 4.0 V V V = V , I = 250A GS(TH) DS GS D 0.41 0.75 V = 10V, I = 2.0A GS D Static Drain-Source On-Resistance R DS (ON) 0.43 0.85 V = 6.0V, I = 2.0A GS D Diode Forward Voltage 0.8 1.2 V V V = 0V, I = 1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 231 Input Capacitance C iss V = 25V, V = 0V, DS GS 19 Output Capacitance C pF oss f = 1.0MHz 11 Reverse Transfer Capacitance C rss Gate Resistance R 2.3 V = 0V, V = 0V, f = 1.0MHz G DS GS 5.6 Total Gate Charge Q g V = 104V, V = 10V, DS GS Gate-Source Charge 0.8 nC Q gs I = 2.0A D Gate-Drain Charge 2.0 Q gd Turn-On Delay Time 2.3 t D(ON) Turn-On Rise Time 1.7 t V = 65V, I = 2.0A, R DS D ns 6.6 V = 10V, R = 6.0 Turn-Off Delay Time t GS G D(OFF) 1.7 Turn-Off Fall Time t F Reverse Recovery Time t 26 ns RR V = 100V, I =1.0A, di/dt=100A/s R F Reverse Recovery Charge Q 21 nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMN13H750S October 2015 Diodes Incorporated www.diodes.com Document number: DS37572 Rev. 4 - 2 NEW PRODUCT NEW PRODUCT