DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features I Low R ensures on state losses are minimized D DS(ON) V R (BR)DSS DS(ON) T = +25C Small form factor thermally efficient package enables higher C density end products 8.5m V = 10V 30A GS 30V Occupies just 33% of the board area occupied by SO-8 enabling 10.5m V = 4.5V 25A GS smaller end product 100% UIS (Avalanche) rated Description 100% Rg tested This new generation MOSFET is designed to minimize the on-state Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) resistance (R ) and yet maintain superior switching performance, DS(ON) Halogen and Antimony Free. Green Device (Note 3) making it ideal for high-efficiency power management applications. Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Backlighting Case: POWERDI3333-8 DC-DC Converters Case Material: Molded Plastic, Green Molding Compound Power Management Functions UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) D Pin 1 S POWERDI3333-8 S S G G D D D S D Top View Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number Compliance Case Packaging DMN3010LFG-7 Standard POWERDI3333-8 2,000/Tape & Reel DMN3010LFG-13 Standard POWERDI3333-8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3010LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 11 A I A D State 8.5 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 14 A t<10s A I D 11 T = +70C A Steady T = +25C 30 C Continuous Drain Current (Note 6) V = 10V I A GS D State 20 T = +100C C Pulsed Drain Current (10s pulse, duty cycle = 1%) 90 A I DM Avalanche Current (Note 7) L = 0.1mH 12.7 A I AS Avalanche Energy (Note 7) L = 0.1mH 8.1 mJ E AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 0.9 W D Steady State 137 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t < 10s 90 C/W Total Power Dissipation (Note 6) P 2.4 W D Steady State 52 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t < 10s 35 C/W Total Power Dissipation (Note 6) TC = +25C P 26 W D Thermal Resistance, Junction to Case (Note 6) R 4.8 C/W JC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C 1 A J I V = 30V, V = 0V DSS DS GS Zero Gate Voltage Drain Current T = +150C (Note 9) 100 A J Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.0 2.5 V V = V , I = 250A GS(th) DS GS D 6.5 8.5 V = 10V, I = 18A GS D Static Drain-Source On-Resistance R m DS(ON) 8 10.5 VGS = 4.5V, ID = 16A Diode Forward Voltage 0.75 1.0 V V V = 0V, I = 1A SD GS S On State Drain Current (Note 9) 10 A VDS 5V, VGS = 4.5V I D(ON) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 2,075 4,150 C iss V = 15V, V = 0V, DS GS Output Capacitance 190 380 pF C oss f = 1.0MHz 138 Reverse Transfer Capacitance C 276 rss 2.4 Gate Resistance R 5 V = 0V, V = 0V, f = 1.0MHz g DS GS 16.1 Total Gate Charge (V = 4.5V) Q 32 GS g 37 Total Gate Charge (V = 10V) Q 74 GS g nC V = 15V, I = 18A DS D 6.1 Gate-Source Charge Q 12 gs 5.9 Gate-Drain Charge 12 Qgd Turn-On Delay Time 4.5 10 t D(on) Turn-On Rise Time 19.6 35 t V = 15V, V = 10V, r DS GS ns Turn-Off Delay Time 31 50 t RL = 0.83, RGEN = 3, D(off) Turn-Off Fall Time 10.7 21 t f 13.7 Reverse Recovery Time t 27 ns rr I =15A, di/dt=500A/s F Reverse Recovery Charge Q 18.3 37 nC rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 7. UIS in production with L = 1mH, TJ = +25C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. POWERDI is a registered trademark of Diodes Incorporated 2 of 7 DMN3010LFG June 2015 Diodes Incorporated www.diodes.com Document number: DS36195 Rev. 7 - 2 NEW PRODUCT