DMN3010LK3 Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low R ensures on state losses are minimized DS(ON) V R (BR)DSS DS(ON) T = +25C C Small form factor thermally efficient package enables higher 9.5m V = 10V 43A GS density end products 30V 11.5m V = 4.5V 39A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(on) Mechanical Data performance, making it ideal for high efficiency power management Case: TO252-3L applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Backlighting Weight: 0.33 grams (approximate) DC-DC Converters Power Management Functions Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMN3010LK3-13 TO252 2500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN3010LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady C 43 A I D State 34 T = +70C C Continuous Drain Current (Note 6) V = 10V GS Steady T = +25C 13.1 A I A D State 10.5 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 90 A DM Avalanche Current (Notes 7) L = 0.1mH I 28 A AR Avalanche Energy (Notes 7) L = 0.1mH E 40 mJ AR Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.6 W D Steady State 78 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 31 C/W Total Power Dissipation (Note 6) P 2.4 W D Steady State 51 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 21 C/W Thermal Resistance, Junction to Case (Note 6) R 4.7 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.0 2.5 V V = V , I = 250 A GS(th) DS GS D 8 9.5 V = 10V, I = 18A GS D Static Drain-Source On-Resistance m R DS(ON) 10 11.5 V = 4.5V, I = 16A GS D Diode Forward Voltage V 0.75 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 2075 iss V = 15V, V = 0V, DS GS Output Capacitance 190 pF C oss f = 1.0MHz Reverse Transfer Capacitance 138 C rss Gate resistance 2.4 R V = 0V, V = 0V, f = 1.0MHz g DS GS 16.1 Total Gate Charge (V = 4.5V) Q GS g 37 Total Gate Charge (V = 10V) Q GS g nC V = 15V, I = 18A DS D 6.1 Gate-Source Charge Q gs 5.9 Gate-Drain Charge Q gd 4.5 Turn-On Delay Time t D(on) 19.6 Turn-On Rise Time t r V = 15V, V = 10V, DS GS ns Turn-Off Delay Time t 31 R = 0.83, R = 3 , D(off) L GEN Turn-Off Fall Time 10.7 t f Reverse Recovery Time 13.7 ns t rr I =15A, di/dt=500A/s F Reverse Recovery Charge 18.3 nC Q rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 April 2014 DMN3010LK3 Diodes Incorporated www.diodes.com Document number: DS36762 Rev. 2 - 2