DMN3025LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D Low Input Capacitance V R max (BR)DSS DS(ON) T = +25C A Fast Switching Speed 20m V = 10V 7.2A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V 31m V = 4.5V GS 5.8A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: SO-8 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Backlighting e3 Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.008 grams (approximate) DC-DC Converters SO-8 S D S D D S G D Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN3025LSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3025LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 7.2 A A I D State 5.7 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 9.6 A t<10s I A D 7.7 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 3 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) 40 A I DM Avalanche Current (L = 0.1mH) 14.5 A I AS Repetitive Avalanche Energy (L = 0.1mH) 10.5 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 1.4 A Total Power Dissipation (Note 5) P W D 0.9 T = +70C A Steady State 87 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 44 1.7 T = +25C A Total Power Dissipation (Note 6) P W D 1.1 T = +70C A Steady State 73 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t<10s 37 Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 1 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.8 - 2.0 V V = V , I = 250 A GS(th) DS GS D 14 20 V = 10V, I = 10A GS D Static Drain-Source On-Resistance R m DS (ON) 23 31 V = 4.5V, I = 7.5A GS D Forward Transfer Admittance 11 - S Y V = 5V, I = 10A fs DS D Diode Forward Voltage 0.70 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 641 C iss V = 15V, V = 0V, DS GS Output Capacitance C 66 pF oss f = 1.0MHz Reverse Transfer Capacitance C 50 rss Gate resistance R 2.2 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = 4.5V) Q 6 GS g Total Gate Charge (V = 10V) Q 13.2 GS g nC V = 15V, I = 10A DS D Gate-Source Charge Q 1.7 gs Gate-Drain Charge Q 2.2 gd Turn-On Delay Time 3.3 t D(on) Turn-On Rise Time 4.4 t V = 15V, V = 10V, r DD GS ns Turn-Off Delay Time 22.3 R = 6 , I = 1A t G D D(off) Turn-Off Fall Time t 5.3 f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 January 2013 DMN3025LSS Diodes Incorporated www.diodes.com Document number: DS35746 Rev. 3 - 2 NEW PRODUCT NEW PRODUCT ADVANCE INFORMATION