DMN30H14DLY N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low Gate Threshold Voltage D V R (BR)DSS DS(ON) T = +25C Low Input Capacitance A 0.21A Fast Switching Speed 14 V = 10V GS 300V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20 V = 4.5V 0.17A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (R ) and yet maintain superior switching DS(ON) Case: SOT89 performance, making it ideal for high efficiency power management Case Material: Molded Plastic, Green Molding Compound applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Finish Matte Tin Finish annealed over Copper lead e3 frame. Solderable per MIL-STD-202, Method 208 Power management functions Weight: 0.052 grams (approximate) Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc D SOT89 G S Equivalent Circuit Pin-out Top Top View Ordering Information (Note 4) Part Number Compliance Case Quantity per reel DMN30H14DLY-13 Standard SOT89 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN30H14DLY Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 300 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A 0.21 Continuous Drain Current (Note 6) V = 10V I A GS D State 0.16 T = +70C A 1 A Pulsed Drain Current (10 s pulse, duty cycle 1%) I DM Maximum Body Diode Continuous Current (Note 6) I 2 A S Thermal Characteristics Characteristic Symbol Value Units (Note 5) 0.9 Total Power Dissipation P W D (Note 6) 2.2 (Note 5) 132 Thermal Resistance, Junction to Ambient R JA (Note 6) 55 C/W (Note 6) 9.6 Thermal Resistance, Junction to Case R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 300 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 240V, V = 0V DSS DS GS Gate-Body Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(th) DS GS D 6 14 V = 10V, I = 0.3A GS D Static Drain-Source On-Resistance R DS(ON) 6 20 V = 4.5V, I = 0.2A GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 0.3A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 96 C iss V = 25V, V = 0V, DS GS Output Capacitance 5.8 pF C oss f = 1MHz Reverse Transfer Capacitance 3.2 C rss Gate Resistance R 12 V = 0V, V = 0V, f = 1.0MHz G DS GS 4 Total Gate Charge Q g V = 192V, V = 10V, DS GS 0.3 Gate-Source Charge Q nC gs I = 0.5A D 1.9 Gate-Drain Charge Q gd 3.3 Turn-On Delay Time t D(on) 8.6 Turn-On Rise Time t r V = 60V, R =200 DS L nS 22 Turn-Off Delay Time t V = 10V, R = 25 D(off) GS G Turn-Off Fall Time 12 t f Reverse Recovery Time 43 nS t rr V = 100V, I =1.0A, di/dt=100A/s R F Reverse Recovery Charge 47 nC Q rr Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect 8. Guaranteed by design. Not subject to production testing 2 of 6 March 2014 DMN30H14DLY Diodes Incorporated www.diodes.com Document number: DS36812 Rev. 2 - 2 ADVANCED INFORMATION