DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 73m V = 10V 3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) GS Halogen and Antimony Free. Green Device (Note 3) 30V 110m V = 4.5V 2.7A Qualified to AEC-Q101 standards for High Reliability GS Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: SOT-23 (R ) and yet maintain superior switching performance, making it DS(on) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 General Purpose Interfacing Switch Terminal Connections Indicator: See diagram Power Management Functions Terminals: Finish NiPdAu over Copper leadframe. Solderable Boost Application per MIL-STD-202, Method 208 Analog Switch Weight: 0.027 grams (approximate) Ordering Information (Note 4) Part Number Case Packaging DMN3110S-7 SOT-23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3110S Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 2.5 A Continuous Drain Current (Note 5) V = 10V I A GS D State 2.0 T = +70C A Steady T = +25C 3.3 A A Continuous Drain Current (Note 6) V = 10V I GS D State 2.7 T = +70C A T = +25C 3.8 A Continuous Drain Current (Note 6) V = 10V t 10sec I A GS D 3.1 T = +70C A Steady T = +25C 2.7 A A Continuous Drain Current (Note 6) V = 4.5V I GS D State 2.1 T = +70C A Pulsed Drain Current (Note 7) I 25 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 0.74 W D Thermal Resistance, Junction to Ambient (Note 5) 173.4 C/W R JA Total Power Dissipation (Note 6) 1.3 W P D Thermal Resistance, Junction to Ambient (Note 6) 99.1 C/W R JA Total Power Dissipation (Note 6) t 10sec P 1.8 W D Thermal Resistance, Junction to Ambient (Note 6) t 10sec 72 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 30 - - V BV V = 0V, I = 250 A DSS GS D - - 1.0 A Zero Gate Voltage Drain Current T = +25C I V = 30V, V = 0V C DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.0 - 3.0 V V = V , I = 250 A GS(th) DS GS D - 54 73 V = 10V, I = 3.1A GS D Static Drain-Source On-Resistance m R DS (ON) - 88 110 V = 4.5V, I = 2A GS D Forward Transfer Admittance Y - 4.8 - mS V = 10V, I = 3.1A fs DS D Diode Forward Voltage (Note 6) V - 0.75 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C - 305.8 - pF iss V = 15V, V = 0V, DS GS Output Capacitance C - 39.9 - pF oss f = 1.0MHz Reverse Transfer Capacitance - 39.5 - pF C rss Gate Resistance - 1.4 - R V = 0V, V = 0V,f = 1.0MHz g DS GS - 4.1 - nC Total Gate Charge (V = 4.5V) Q GS g V = 10V, V = 10V, GS DS - 8.6 - nC Total Gate Charge (V = 10V) Q GS g I = 3A D Gate-Source Charge Q - 1.2 - nC gs Gate-Drain Charge Q - 1.5 - nC gd Turn-On Delay Time t - 2.6 - ns D(on) Turn-On Rise Time t - 4.6 - ns r V = 15V, V = 10V, DD GS Turn-Off Delay Time t - 13.1 - ns R = 47 , R = 3 , D(off) L G Turn-Off Fall Time t - 2.5 - ns f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, on 1inch square copper plate 7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1% 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 October 2013 DMN3110S Diodes Incorporated www.diodes.com Document number: DS31561 Rev. 3 - 2 NEW PRODUCT